기반 기술 : 새로운 트렌치 게이트 MOSFET 제조 공정기술 및 특성

백종무 ( Jong Mu Baek ),조문택 ( Moon Taek Cho ),나승권 ( Seung Kwon Na ),백종무 ( Jong Mu Baek ),조문택 ( Moon Taek Cho ),나승권 ( Seung Kwon Na ) 한국항행학회 2014 韓國航行學會論文誌 Vol.18 No.4

본 논문에서는 트렌치 게이트 MOSFET에 적용을 위한 고 신뢰성을 갖는 트렌치 형성기술과 고품격의 제조기술을 제안하였다. 이는 향후 전력용 MOSFET 에 널리 적용이 가능하다. 트렌치 구조는 DMOSFET에서 셀 피치크기를 줄여서 Ron 특성을 개선하거나 대다수 전력용 IC에서 전력용 소자를 다른 CMOS(Complementary Metal Oxide Semiconductor) 소자로부터 독립시킬 목적으로 채용된다. 마스크 레이어를 사용하여 자기정렬기술과 산화막 스페이서가 채용된 고밀도 트렌치 MOSFET를 제작하기 위한 새로운 공정방법을 구현하였다. 이 기술은 공정 스텝수를 감소시키고 트렌치 폭과 소오스, p-body 영역을 감소시킴으로써 결과적으로 셀 밀도와 전류 구동성능을 증가시키며 온 저항의 감소를 가져왔다. In this paper, high reliable trench formation technique and a novel fabrication techniques for trench gate MOSFET is proposed which is a key to expend application of power MOSFET in the future. Trench structure has been employed device to improve Ron characteristics by shrinkage cell pitch size in DMOSFET and to isolate power device part from another CMOS device part in some power integrated circuit. A new process method for fabricating very high density trench MOSFETs using mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width and source and p=body region with a resulting increase in cell density and current driving capability and decrease in on resistance.

NMOSFET의 Hot-Carrier 열화현상

백종무(Baek, Jong-Mu),김영춘(Kim, Young-Choon),조문택(Cho, Moon-Taek) 한국산학기술학회 2009 한국산학기술학회논문지 Vol.10 No.12

본 논문에서는 아날로그 회로에 사용되는 NMOSFET에 대한 Hot-Carrier 열화특성을 조사하였다. 여러 값을 갖는 게이트 전압으로 스트레스를 인가한 후, 소자의 파라미터 열화를 포화 영역에서 측정하였다. 스트레스 게이트 전압의 범위에 따라 계면 상태(interface state) 뿐 아니라 전자와 정공의 포획이 드레인 근처 게이트 산화막에서 확인 되었다. 그리고 특히 낮은 게이트 전압의 포화영역에서는 정공의 포획이 많이 발생하였다. 이러한 전하들의 포획은 전달 컨덕턴스 (gm) 및 출력 컨덕턴스 (gds)의 열화의 원인이 된다. 아날로그 동작 범위의 소자에서 파라미터 열화는 소자의 채널 길이에 매우 민감하게 반응한다. 채널길이가 짧을수록 정공 포획이 채널 전도도에 미치는 영향이 증가하 게 되어 열화가 증가되었다. 이와 같이 아날로그 동작 조건 및 아날로그 소자의 구조에 따라 gm 및 gds의 변화가 발 생하므로 원하는 전압 이득(AV=gm/gds)을 얻기 위해서는 회로 설계시 이러한 요소들에 대한 고려가 필요하다. This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance(gm) and the output conductance(gds). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of gm and gds are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain (AV=gm/gds) in analog circuit.

양성자가 주입된 NPT형 전력용 다이오드의 전류-전압 특성

김병길,백종무,이재성,배영호,Kim Byoung-Gil,Baek Jong-Mu,Lee Jae-Sung,Bae Young-Ho 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

양성자 주입 기술을 이용한 초고속 회복 다이오드의 제작

이강희,김병길,이용현,백종무,이재성,배영호,Lee, Kang-Hee,Kim, Byoung-Gil,Lee, Yong-Hyun,Baek, Jong-Mu,Lee, Jae-Sung,Bae, Young-Ho 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.12

Proton irradiation technology was used for the improvement of power diode switching characteristics. Proton irradiation was carried out at the energies of 2.32 MeV, 2.55 MeV, 2.97 MeV so that the projection range of irradiated proton would be at the metallurgical junction, depletion region and neutral region of pn diode, respectively. Dose conditions were varied into three conditions of 1${\times}$10$^{11}$ cm$^{-2}$ , 1${\times}$10$^{12}$ cm$^{-2}$ , 1${\times}$10$^{13}$ cm$^{-2}$ at each condition of energies. Characterization of the device was performed by I-V(current-voltage), C-V(capacitance-voltage) and trr(reverse recovery time) measurement. At the optimum condition of irradiation, the reverse recovery time of device has been reduced about 1/5 compared to that of original un-irradiated device.

병원내 온도와 습도조절을 위한 태양광 발전 시스템 설계

조문택(Moontaek Cho),이충식(Chungsik Lee),백종무(Jongmu Baek) 한국방사선학회 2011 한국방사선학회 논문지 Vol.5 No.3

본 논문에서는 온도와 습도 및 냉·난방을 조절하여 건물 내의 쾌적한 환경을 제공하기 위한 승압쵸퍼와 PWM 전압형 인버터로 구성된 태양광 발전 시스템을 제안하였다. 이 시스템은 안정된 변조를 위해 원칩 마이크로프로세서를 사 용하여 동기신호와 제어신호로 처리하였다. PWM 전압형 인버터와 위상의 동기를 위하여 계통전압을 검출하여 계통전압과 인버터 출력을 동상 운전하므로 잉여전력을 연계할 수 있게 하였으며, 건물이나 병원 등 특정 건물의 온도 및 습도센서에 적용하여 양호한 동특성을 얻을 수 있었다. 또한 시스템에 적용한 결과 고역률과 저고조파 출력을 유지함으로써 부하와 계통에 전력이 안정하게 공급될 수 있도록 제어하여 좋은 결과를 얻을 수 있었다. In this paper we propose an improved PV generation systems. Improved systems for temperature and humidity controlled heating and air conditioning offers a pleasant environment within the building, set up chopper and consists of a PWM voltage type inverter. The proposed system is stable modulation for a one-chip microprocessor using the synchronous signal and control signals was treated. The proposed system is a PWM voltage type inverter and phase of the synchronous to the grid voltage to detect the system voltage and inverter output to drive the statue, so surplus power to connection was able to, certain buildings such as buildings or hospitals, temperature and humidity sensor is applied to the good dynamic characteristic could be obtained. In addition, the system was applied to the high power factor and low-frequency harmonics by maintaining the output load and grid to power to be supplied to a stable control could get a good result.

자연재해 및 방사능 오염 모니터링용 USN 식물공장관리 방법 및 시스템 개발

주해종(Haejong Joo),조문택(Moontaek Cho),이충식(Chungsik Lee),백종무(Jongmu Baek) 한국방사선학회 2011 한국방사선학회 논문지 Vol.5 No.6

본 논문은 재난재해와 방사선 오염으로부터 안전한 농작물 관리를 위한 플랫폼, 그리고 식물 생장 모니터링 시스템을 제안하였다. 또한, 식물생장을 모니터링하여 식물공장 내에서 생장하는 식물의 크기를 효율적으로 측정할 수 있는 시스템을 개발하였다. 본 연구에 따른 기대효과는 첫째, 자연재해와 방사능오염 감시를 통해 신속하고 정확한 대처 기능으로 농산물 품질과 생산성 향상을 가져올 수 있다. 둘째, 식물의 크기 측정 데이터를 유지 관리하는데 소요되는 시간을 절약하여 경비를 절감할 수 있다. 마지막으로 식물 공장 관리자의 작업 효율을 향상시킬 수 있다. In this paper, monitoring system and platform of plant growth are suggested which are required by safe crop management about disaster and radiation pollution. In addition, by monitoring plant growth, the growth of plants that can measure the size of the efficient system was developed. The expected effect of this study, first, through natural disasters and radioactive contamination monitors produce fast and accurate response function can result in improved quality and productivity. Second, the size of the plant required to maintain the measurement data can save time and expense savings. Finally, plant managers can improve work efficiency.

공간벡터 PWM 방식을 이용한 태양광 발전 시스템 제어

조문택 ( Moontaek Cho ),최혜길 ( Haegill Choi ),이충식 ( Chungsik Lee ),백종무 ( Jongmu Baek ) 한국방사선학회 2010 한국방사선학회 논문지 Vol.4 No.3

본 논문에서는 태양광 발전시스템을 이용한 PWM(Pulse Width Modulation) 전압형 인버터를 전력변환기로 구성하였고, 안정된 변조를 위해서 동기신호와 제어신호를 56F8323 마이크로프로세서에 의해서 처리하였다. PWM 전압형 인버터는 태양전지가 연속 발전할 수 없는 단점을 보완하기 위해 일반 상용전원과 연계함으로써 약 10~20[%]의 전력 절감 효과를 얻을 수 있는 에너지 절약 전원 복합형 전력변환장치로 구성하였다. 그리고 PWM 전압형 인버터와 위상동기를 위해서 계통전압을 검출하고 계통전압과 인버터 출력을 동상 운전하므로 잉여전력을 계통과 연계할 수 있게 하였다. 또한, 고조파를 절감한 출력을 유지함으로써 부하와 계통에 전력이 안정하게 공급될 수 있도록 제어 시스템을 적용하여 좋은 결과를 얻을 수 있었다. In this paper, a photovoltaic system is designed with PWM(Pulse Width Modulation) voltage source inverter. Proposed synchronous signal and control signal was processed by 56F8323 microprocessor for stable modulation. The PWM voltage source inverter using inverter consists of complex type of electric power converter to compensate for the defect, that is solar cell cannot be developed continuously by connecting with the source of electric power for ordinary use. It can cause the effect of saving electric power, from 10 to 20[%]. The PWM voltage source inverter operates in situation that its output voltage is in same phase with the utility voltage. In addition, I connected extra power to the system through operation the system voltage and inverter power in a synchronized way by extracting the system voltage so that the phase of the system and PWM voltage inverter can be synchronized. In the system of this research showed good results after being controlled in order to provide stable power to the load and the system through maintaining and low output power of harmonics.

Matlab을 이용한 PV 시스템의 해석 및 모델링

조문택(Moon-Taek Cho),송호빈(Ho-Bin Song),백동현(Dong-Hyun Baek),김영춘(Young-Chun Kim),백종무(Jong-Mu Baek),조건식(Gun-Sik Cho) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7

In the previous study using pspice for pv systems modeling and simulation were performed.. In this paper, the most commonly used with PSPICE simulations using Matlab simulation tools, one of the solar system even easier to implement was modeled using simulink. If you use this control in the field is more diverse and accurate simulation and to implement it in a real system that can reduce trial and error will be able to get good simulation results.

PSPICE를 이용한 발광다이오드 모델링 및 분석

조문택(Moon-Taek Cho),송호빈(Ho-Bin Song),김영춘(Young-Chun Kim),백동현(Dong-Hyun Baek),황락훈(Lak-Hoon Hwang),백종무(Jong-Mu Baek),조건식(Gun-Sik Cho) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7

Worldwide problem, due to the depletion of energy to power more efficient use of the same capacity to improvise for the use of LED brightness is growing. Recent advances in LED technology have lead to LEDs' widespread use in outdoor-signal applications, such as in traffic and railroad signals. Likewise, for large system design and production of issues leading to the simulation should be performed with less effort than to create a system that is reliable. In this paper a wide field of use to more accurately simulate a LED, and easy to use PSPICE can be used as general-purpose use of the LED device modeling. According to a particular LED, the device easy to use basic input variables to the values of library. In order to determine the behavior of the library to provide basic diode device, compared with PSPICE simulations confirm the accuracy of the simulation was performed.

마이크로 센서에의 응용을 위한 SnO₂_(-x)열산화 박막의 특성

김태훈,정완영,홍영호,백종무,최만식,이덕동 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1

SnO_(2-x) thin films were prepated by thermal evaporation of metal tin granules on silicon wafer and were oxidized under various furnace termperature in exposure to O_(2). Mobility, carrier concerntration and resistivity of the SnO_(2-x) thin films were measured by Hall effect measurement and 4-point probe method. The temperature profile in thermal oxidation showed great effects on electric properites and surface structures of the thin films. The thin films were used for the sensing membrane of C_(4)H_(10) microsensor. The contact characteristics of Pt electrode-SnO_(2-x) and sensing properties of the films were investigated.