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백규하,김동표,박건식,함용현,도이미,이기준,김경섭 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.3
In this study, we reported the feasibility of filling a high-aspect-ratio through silicon via (HARTSV) with Ag nano paste for a 3D interconnection. TSVs with aspect ratios of 8:1 ∼ 10:1 were fabricated in a deep reactive etching system by using the Bosch process. Then, SiO<sub>2</sub> insulators were deposited by using various chemical vapor deposition (CVD) processes, including plasma enhanced CVD oxides, of which precursors were silane (PECVD Oxide) and tetraethoxysilane (PECVDTEOS), and sub-atmospheric oxide (SACVD oxide). We succeeded in obtaining a SiO<sub>2</su> layer with good step coverage over 80% for all via CD sizes by using SACVD oxidation process. The thickness of SiO<sub>2</su> for the via top and the via bottom were in the range 158.8 ∼ 161.5 nm and 162.6 ∼ 170.7 nm, respectively. The HAR-TSVs were filled with Ag nano paste by using vacuum assisted paste printing. Then, the samples were cured on a hotplate at 80 C for 2 min. The temperature was increased to 180 ℃ at a rate of 25 ℃/min and the samples were re-annealed for 2 min. We investigated the effects for the time of evacuation/ purge process and of the vacuum drying on the filling properties. A field emission scanning electron microscope (FE-SEM), X-ray microscope and focused ion beam (FIB) were used to investigate the filling profile of the TSV with Ag nano pastes. By increasing the evacuation/purge time and the vacuum drying time, we could fully fill the TSV was full filled with Ag nano paste and then form a metal plug.
C54-TiSi2/SiO2 의 열적 불안정성에 미치는 계면 구조의 영향
백규하,서동우,김홍승,강진영 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.8
C54-TiSi₂ grown on SiO₂ as an interconnect showed thermal instability, even skinning, through the rapid thermal anneal(RTA). In order to understand the thermal instability of C54-TiSi₂ the interface between the thin film and the substrate was analyzed with Auger electron spectroscopy(AES) and transmission electron microscopy(TEM). Also we quantitatively analysed residual stress using known thermal properties of C54-TiSi₂. It was noted, as a result, that considerable amounts of residual stress were released by silicon retained at the interface. Therefore surplus silicon should be prepared between titanium and substrate in order to make C54-TiSi₂ thermally stable, so that the surplus silicon may play a role of buffer against residual stress.
저온 공정 PVP게이트 절연체를 이용한 고성능 플렉서블 유기박막 트랜지스터의 계면처리 효과
윤호진,백규하,신홍식,이가원,이희덕,도이미,Yun, Ho-Jin,Baek, Kyu-Ha,Shin, Hong-Sik,Lee, Ga-Won,Lee, Hi-Deok,Do, Lee-Mi 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.1
In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.
Al(Cu 1%)막의 플라즈마 식각후 부식 억제를 위한 $SF_6$ 처리시 fluorine passivation 효과
김창일,권광호,백규하,윤용선,김상기,남기수 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.3
After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS (X-ray photoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, the $SF_6$ plasma treatment subsequent to the etch has been carried out. A passivation layer is formed by fluorine-related compounds on etched Al-Cu alloy surface after $SF_6$ treatment, and the layer suppresses effectively the corrosion on the surface as the RF power of $SF_6$ treatment increases. The corrosion could be suppressed successfully with $SF_6$ treatment in the RF power of 150watts.