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N형 고분자 반도체의 전하주입 특성 향상을 통한 저전압 유기전계효과트랜지스터 특성 연구
문지훈,백강준,Moon, Ji-Hoon,Baeg, Kang-Jun 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10
Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.
이온성 첨가제 도입을 통한 고이동도 고분자 반도체 특성 구현과 유기전계효과트랜지스터 및 유연전자회로 응용 연구
이동현,문지훈,박준구,정지윤,조일영,김동은,백강준,Lee, Dong-Hyeon,Moon, Ji-Hoon,Park, Jun-Gu,Jung, Ji Yun,Cho, Il-Young,Kim, Dong Eun,Baeg, Kang-Jun 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.3
Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.
가시광 수중 무선통신을 위한 이종접합 유기물 반도체 기반 고감도 포토트랜지스터 연구
이정민 ( Jeong-min Lee ),서성용 ( Sung Yong Seo ),임영수 ( Young Soo Lim ),백강준 ( Kang-jun Baeg ) 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.2
Underwater wireless communication is a challenging issue for realizing the smart aqua-farm and various marine activities for exploring the ocean and environmental monitoring. In comparison to acoustic and radio frequency technologies, the visible light communication is the most promising method to transmit data with a higher speed in complex underwater environments. To send data at a speedier rate, high-performance photodetectors are essentially required to receive blue and/or cyan-blue light that are transmitted from the light sources in a light-fidelity (Li-Fi) system. Here, we fabricated high-performance organic phototransistors (OPTs) based on P-type donor polymer (PTO2) and N-type acceptor small molecule (IT-4F) blend semiconductors. Bulk-heterojunction (BHJ) PTO2:IT-4F photo-active layer has a broad absorption spectrum in the range of 450~550 nm wavelength. Solution-processed OPTs showed a high photo-responsivity >1,000 mA/W, a large photo-sensitivity >10<sup>3</sup>, a fast response time, and reproducible light-On/Off switching characteristics even under a weak incident light. BHJ organic semiconductors absorbed photons and generated excitons, and efficiently dissociated to electron and hole carriers at the donor-acceptor interface. Printed and flexible OPTs can be widely used as Li-Fi receivers and image sensors for underwater communication and underwater internet of things (UIoTs).
전력반도체 응용을 위한 용액 공정 인듐-갈륨 산화물 반도체 박막 트랜지스터의 성능과 안정성 향상 연구
김세현 ( Se-hyun Kim ),이정민 ( Jeong Min Lee ),( Daniel Kofi Azati ),김민규 ( Min-kyu Kim ),정유진 ( Yujin Jung ),백강준 ( Kang-jun Baeg ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.4
Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga<sub>2</sub>O<sub>3</sub> are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.
인쇄전자 기술을 활용한 지능형 반도체 소자 구현을 위한 유기전계효과 트랜지스터 소자의 광파 어닐링 효과 연구
권미정 ( Mi Jeong Kwon ),박운익 ( Woon Ik Park ),임영수 ( Young Soo Lim ),남수용 ( Suyong Nam ),백강준 ( Kang-jun Baeg ) 한국화상학회 2020 한국화상학회지 Vol.26 No.3
Here we study new post-treatment methods of polymeric semiconductors for the applications of printed and flexible electronics. In contrast to the conventional thermal process using a hotplate, our lightwave-assisted annealing could provide an efficient and fast way both for enhancing the molecular packing order and increasing the crystallinity of organic semiconductor thin-films through the transfer of thermal energy efficiently into the inside of the active layer. After light-wave annealing process, OFETs exhibited higher field-effect mobilities and consistent performance with a little standard deviation of electronic fundamental parameters in comparison to those of the hotplate treatment. Therefore, it is expected to be widely applied for mass productive and large area printed and flexible applications.