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Dual Structure of Cholesteric Liquid Crystal Device for High Reflectance
배병성,한승오,신성식,Ken Chen,Chao Ping Chen,Yikai Su,전철규 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.6
The structure of cholesteric liquid crystal (CLC) undergoes a helical distortion which is left-handed or righthanded. By the right-hand CLC layer, Left-handed polarized light is reflected and vice versa. The color reflected by the selective reflection depends on the chiral pitch and the anisotropy of the refractive index. However, the reflectance of the single CLC layer is theoretically limited to 50% because only one of right- or left-handed circularly polarized light is reflected. In this paper, we demonstrate the enhanced reflectance of a dual-CLC device which can reflect both right- and left-handed circularly polarized light.
유진태(Daniel J.T Yuh)배병성(Byung-Seong Bae) 호서대학교 공업기술연구소 2007 공업기술연구 논문집 Vol.26 No.1
For the highest display quality in the large thin film transistor liquid crystal displays (TFT LCDs), we should improve the flicker characteristics. One of the problems accompanying the large TFT LCDs is that there is Gate/Data signal delay caused by increase of the resistance and the parasitic capacitance of each long signal line. In this paper, level shift of pixel voltage mainly causing flicker in the large TFT LCDs was investigated. A gate and data delay effect on level shift of pixel voltage, and an aspect of variations of level shift of pixel voltage according to the gate and data signal schematic was evaluated.
단일 a-InGaZnO 박막 트랜지스터를 이용한 정전용량 터치 화소 센서 회로
강인혜,배병성,황상호,백영조,문승재 한국센서학회 2019 센서학회지 Vol.28 No.2
The a-InGaZnO (a-IGZO) thin film transistor (TFT) has the advantages of larger mobility than that of amorphous silicon TFTs, acceptable reliability and uniformity over a large area, and low process cost. A capacitive-type touch sensor was studied with an a-IGZO TFT that can be used on the front side of a display due to its transparency. A capacitive sensor detects changes of capacitance between the surface of the finger and the sensor electrode. The capacitance varies according to the distance between the sensor plate and the touching or non-touching of the sensing electrode. A capacitive touch sensor using only one a-IGZO TFT was developed with the reduction of two bus lines, which made it easy to reduce the pixel pitch. The proposed sensor circuit maintained the amplification performance, which was investigated for various drive conditions.
Charge Transport at High Temperatures in Solution-processed Zinc-tin-oxide Thin-film Transistors
유경민,배병성,정명희,윤의중 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.2
We report charge transport studies at temperatures in the range of 303 − 402 K for solutiondepositedamorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operating in the subthresholdregion. The developed TFTs, which had a non-patterned bottom gate and top contactstructure, employed a heavily-doped Si wafer and a SiO2 as a gate electrode and a gate insulatorlayer, respectively. In a-ZTO, the trap activation energy (ETAC) was estimated using the Maxwell-Boltzmann approximation. The decreasing ETAC with increasing gate-voltage-induced sheet carrierdensity (ns) in the a-ZTO channel can be understood as being due to a shift of the Fermi level(EF ) toward the conduction band edge (EC) with increasing gate voltage. Samples with low ns,which exhibited thermally-activated behavior, revealed multiple trap and release phenomena. Insamples with high ns, on the other hand, we observed decreasing mobility/conductivity with increasingtemperature at temperatures higher than 348 K. This suggests that the ETAC can drop tozero, implying a shift of EF beyond EC, where the crossover from the thermal activation to bandtransport is observed. The temperature-dependent characteristics also revealed that the density ofsubgap trap states at EF exhibited thermally-activated behavior with an activation energy of 0.7eV, suggesting that subgap trap states existed near 0.7 eV below the EC.