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산업용 효모에서 Bacillus subtilis Endo-β-1,4-Glucanase의 생합성 및 분비
박용준,이영호,강현삼,백운화 한국산업미생물학회 1991 한국미생물·생명공학회지 Vol.19 No.4
Bacillus subtilis의 β-1,4-glucanase 유전자와 Saccharomyces cerevisiae의 alcohol dehydrogenase isoenzyme I 유전자(ADHI)의 promoter와 mouse α-amylase의 분비신호를 연결하여 분비형 플라스미드를 구성하였으며 이를 산업용 알콜생산 효모인 Saccharomyces cerevisiae 54에 도입하여 형질전환시켰다. 한편 β-glucanase 유전자의 발현정도를 증대시키기 위해 CYCI 유전자의 전사종결신호를 부가한 후 역시 Saccharomyces cerevisiae 54에 도입하였다. 형질전환체들은 carboxymethyl cellulose가 함유된 평판배지에서 β-glucanase를 분비하고 있음을 확인할 수 있었다. 전사종결 신호가 부가된 경우엔 전체역가가 2배정도 증가하였다. 형질전환체들이 세포밖으로 분비한 효소역가는 전체의 60% 정도였다. DNA segment encoding β-1,4-glucanase of Bacillus subtilis was fused in frame to mouse α-amylase signal sequence behind the alcohol dehydrogenase isoenzyme I gene (ADHI) promoter of the yeast expression vector pMS12. To enhance the expression level of the β-glucanase gene in yeast, transcription terminator sequence iso-1-cytochrome c gene (CYCI) was inserted into the recombinant plasmid. The transformants harbouring such recombinant plasmids secreted β-glucanase into the culture medium. The expresstion level of the β-glucanase gene was increased about 2-fold caused by inserting the terminator. The amount of the secreted β-glucanase in culture medium was approximately 60% of the total quantity synthesized.
박용준,이종태,한천구 청주대학교 산업과학연구소 2016 産業科學硏究 Vol.33 No.2
Recently, we tend to have been rapidly increasing damage caused by globally explosion. In particular, November 23, 2010, there is a large damage to human life and buildings by the Yeonpyeong Island shelling by North Korea troops. As scheme for solving this, there is in progress actively any HPFRCC studies of various methods are uneconomical property, construction performance somewhat inadequate circumstances to apply to the actual building. Therefore, in this study, an attempt is made to derive the mortar compounding ratio as one of the research in order to derive the optimum blend of HPFRCC. In the case of experimental research results W/B 25% front and at a later date, C:S = 1:0.6 before post-was found to be optimal.
박용준,박남규,류광선,장순호,박신종,윤선미,김동국,Park, Yong Jun,Park, Nam Gyu,Ryu, Gwang Seon,Jang, Sun Ho,Park, Sin Jong,Yun, Seon Mi,Kim, Dong Guk Korean Chemical Society 2001 Bulletin of the Korean Chemical Society Vol.22 No.9
Vanadium oxide thin films with thickness of about 2000 $\AA$ have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 ${\mu}Ah/cm2-{\mu}m$ along with good cycle performance.
TiN 기판 위에 성장시킨 비정질 BaSm<sub>2</sub>Ti<sub>4</sub>O<sub>12</sub> 박막의 구조 및 전기적 특성 연구
박용준,백종후,이영진,정영훈,남산,Park, Yong-Jun,Paik, Jong-Hoo,Lee, Young-Jin,Jeong, Young-Hun,Nahm, Sahn 한국재료학회 2008 한국재료학회지 Vol.18 No.4
The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.
EPR Investigation on a Quantitative Analysis of Eu(II) and Eu(III) in LiCl/KCl Eutectic Molten Salt
박용준,정용주,지광용,조영환,임희정,송규석 대한화학회 2008 Bulletin of the Korean Chemical Society Vol.29 No.1
EPR spectroscopic technique was applied for a quantitative analysis of Eu(II) for a speciation of europium in a LiCl-KCl eutectic melt. By adopting the first absorption line of each isotopes (151Eu and 153Eu), a calibration plot was obtained. The calibration of the EPR intensity shows a good linearity according to the amount of Eu(II). The EPR intensity was identified to increase proportionally with a decrease of the attenuation parameter for EPR microwave power. The fluorescence technique was used qualitatively to find whether either of Eu(II) or Eu(III) ions exists in a molten salt sample. The ICP-AES technique was also adopted to determine the total concentration of europium in the sample, since EPR is only sensitive for detecting the Eu(II) ion. The extent of the reduction of Eu(III) in the LiCl-KCl eutectic melt at 723 K was determined by using this technique.