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N-type amorphous silicon-based bilayers for cost-effective thin-film silicon photovoltaic devices
명승엽,전라순 한국물리학회 2014 Current Applied Physics Vol.14 No.2
We investigate the improvement of peien type thin-film silicon (Si) solar cells by employing a hydrogenated n-type amorphous Si (n-a-Si:H)-based bilayer. The initial conversion efficiency (h) of a-Si:H single-junction solar cells is improved from 9.2 to 10.0%. The developed n-a-Si:H-based bilayer is also suitable for a-Si:H/hydgrogenated microcrystalline Si (mc-Si:H) double-junction solar cells, and thus initial h is improved from 10.4 to 10.8%. With a further optimization, initial h of 11.3% and stabilized h of 10.1% are achieved. Since the n-a-Si:H-based bilayer is easily formed using a conventional process, it can be a promising option for cost-effective mass production of large-area thin-film Si solar modules.
수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용
박준형,명승엽,이가원,Park, Jun-Hyoung,Myong, Seung-Yeop,Lee, Ga-Won 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12
Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.