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알루미늄/실리콘 직접 접촉창에 증착된 화학 증착 알루미늄의 스파이킹 특성
이경일,김영성,주승기,라관구,김우식 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.12
Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.
구리 금속선의 산화 방지를 위한 알루미늄 박막의 산화 방지 특성
이경일,민경익,주승기,라관구,김우식 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.10
The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.