퍼지 동조 적응 KALMAN 필터

노영환 제어로봇시스템학회 1994 제어로봇시스템학회 국내학술대회 논문집 Vol.1994 No.10

전력소자의 기술개발 현황 및 전망

노영환 한국철도학회 2011 철도저널 Vol.14 No.2

A Methodology of Dual Gate MOSFET Dosimeter with Compensated Temperature Sensitivity

노영환 한국전기전자학회 2011 전기전자학회논문지 Vol.15 No.2

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a 60Co -radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

Design of Super-junction TMOSFET with Embedded Temperature Sensor

노영환 한국전기전자학회 2015 전기전자학회논문지 Vol.19 No.2

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

DC/DC 강압컨버터의 PWM-IC 제어기의 방사선영향

노영환,황의성 제어로봇시스템학회 2012 제어로봇시스템학회 각 지부별 자료집 Vol.2012 No.12

DC/DC switching power converters are commonly used to generate a regulated DC output voltage with high efficiency. The DC/DC converter is composed of PWM-IC (pulse width modulation-integrated circuit) controller, a MOSFET (metal-oxide semiconductor feild effect transistor), inductor, capacitor, etc. It is shown that the variation of threshold voltage and the offset voltage in the electrical characteristics of PWM-IC increase by radiation effects in TID (Total Ionizing Dose) testing at the low energy γ rays using <SUP>60</SUP>Co, and 4 heavy ions applied for SEL (Single Event Latch-up) make the PWM pulse unstable. TID testing on PWM-IC is accomplished up to the total dose of 30 krad, and the cross section and the cross section(㎠) versus LET(MeV/㎎/㎠) in the PWM operation is studied at SEL testing after implementation of the controller board.

전력 소자 MOSFET의 신뢰성 연구

노영환,조수연,이상용 제어로봇시스템학회 2015 제어로봇시스템학회 각 지부별 자료집 Vol.2015 No.12

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal – oxide semiconductor field-effect transistor) when a motor operates. In this paper, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of 0/96 mΩ · cm² under the same breakdown voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of mΩ ·cm², which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it’s reliability.

VB.NET 및 VTK 라이브러리를 이용한 3-D Fracture Network System 해석 모듈 개발

노영환,최요순,엄정기 한국암반공학회 2013 한국암반공학회 학술대회 및 세미나 자료집 Vol.2013 No.10

전자식 겸용엔진 제어장치의 액츄에이터 성능평가

노영환 우송대학교 2004 우송대학교 논문집 Vol.9 No.-

In the era of the high price of gas for the automobile, the use of the dual engine for gasoline and LPG (Liquid Petroleum Gas) is very efficient and economic, and can bring about a lot of benefit in our country. The LPG control system designed in the automobile in this paper is to increase the ratio of fuel consumption more efficiently than the present applied system, and to use the fuel of both gasoline and LPG simultaneously. The result is to show the performance of the ratio of fuel consumption to the degree of the theoretical desired value, and to establish the technology for development of ECU (Electronic Control Unit) for the LPG-CNG (Compressed Natural Gas) engine. In addition, the paper is to suggest the basic design for the control system and to do experiment the quantities of the supplied fuel to evaluate the characteristics of the actuator.

고출력 LED 모듈 역률 개선 방법 연구

노영환,Lho, Young Hwan 한국전기전자학회 2014 전기전자학회논문지 Vol.18 No.3

친환경 및 에너지 효율에 대한 관심이 증대되고 있는 가운데 LED(Light Emitting Diode)는 제어방식이 정 전류구동과 SMPS(Switching Mode Power Supply)방식으로 구동하므로 소형화 및 경량화를 이룰 수 있고 전력 소모가 적으며 효율이 높아 광원 및 조명장치에 활용하는데 유용하다. LED 생산업체는 고출력 LED 모듈의 칩 설계 원천기술의 확보가 필요하고, LED 를 조명으로 적용시키기 위해 전력손실을 줄일 수 있는 고출력 LED 모듈 개발을 위한 구동회로 설계와 역률 개선의 방안 연구가 필요하다. 산업현장에서 교류(AC) 직결 LED 구동소자인 HV9910를 일반적으로 사용하고 있다. 본 논문에서 HV9910에 PFC와 Noise Filter를 추가한 구동회로의 역률 및 효율에 대한 개선방법을 시뮬레이션을 통해 검증하는데 있다. Recently, LED (Light Emitting Diode) becomes to be useful to apply for the lightening sources in electric systems and the lightening equipment since the power is less consumed with high efficiency, and the size and the weight of LED are small and light, respectively. The LED is controlled with constant current and SMPS (Switching Mode Power Supply). It is necessary for the LED manufacturer to secure the fundamental technology of designing LED chip, and to study the methodology to improve the power factor (PF) and to design the operational circuit for the development of LED to reduce the power loss in the application of LED lightening. The direct AC (Alternating Current) LED driving circuit, HV9910, is widely used in the industry field. In this paper, it is to evaluate the improved methodology for the power factor and efficiency through simulations when PFC (Power Factor Correction) and Noise Filter are added to HV9910.

다목적 실용위성의 System Clock Generator FPGA 설계

노영환 우송대학교 1999 우송대학교 논문집 Vol.4 No.-

The RDU(Remote Drive Unit) in AOCS(Attitude Orbit Control Subsystem) is consisted of 11 Printed Circuit Boards(PCB), which is divided into the digital logic part and the analog circuit one. There are 15 kinds of FPGA's(Field Programmable Gate Array), one of the design methods for ASIC(Application Specific IC), in the digital logic part in order to carry out the digital data processing at RDU for the function in the middle of 1999. In this research, the FPGA for the System Clock Generator, which is the most important and the fundamental one, is designed and simulated. The frequency of the main clock is 14.985 Mhz which is divided into the necessary kinds of frequencies through the dividing logic. The 16 kinds of Macros are used in order to design the FPGA for the System Clock Generator. The working of digital logic through simulation by using a VLSI design software, Xilinx Foundation, is verified.