$Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 안정성에 소결온도의 영향

남춘우,류정선 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.8

The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.

Zn-Pr-Co-Cr-Dy 산화물계 바리스터 세라믹스의 전기적 안정성

남춘우,박종아,김명준,류정선 한국세라믹학회 2003 한국세라믹학회지 Vol.40 No.11

Zn-Pr-Co-Cr-Dy 산화물계로 구성된 바리스터 세라믹스의 전기적 안정성을 몇 가지 DC 가속열화 스트레스 조건하에서 0.0∼2.0 mol% Dy$_2$O$_3$ 첨가량의 변화에 따라 조사하였다. 바리스터 세라믹스의 밀도는 Dy$_2$O$_3$ 첨가량이 0.5 mol%까지 증가하였으며, 보다 많이 첨가하면 감소하는 것으로 나타났다. 밀도는 전도경로와 밀접한 관계로 인해서 안정성에 큰 영향을 미치는 것으로 나타났다. Dy$_2$O$_3$ 첨가는 바리스터 세라믹스의 비직선 지수를 45 이상, 누설전류를 대략 1.0 $\mu$A 이하로 비직선성을 크게 개선시켰다. DC 스트레스 조건 0.95 V$_{1mA}$/15$0^{\circ}C$/24 h에서 안정성을 조사한 결과, 0.5 mol% 첨가시 상대적으로 가장 높은 안정성을 나타내었다. 전압-전류특성에 있어서 바리스터 전압, 비직선 지수, 누설전류의 변화율은 각각 -0.9%, -14.4%, +483.3%이었으며, 유전특성에 있어서 비유전율 및 손실계수의 변화는 각각 +7.1%, +315.4%이었다. 그 외의 바리스터 세라믹스는 낮은 밀도 때문에 열폭주 현상을 나타내는 매우 불안정한 특성을 나타내었다.다. The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

$Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 성질에 소결온도의 영향

남춘우,류정선 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.7

The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

$Dy_2$$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 전기적 성질 및 안정성

남춘우,윤한수 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.5

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.

ZnO-$Pr_6$$O_{11}$-CoO-$Er_2$$O_3$계 바리스터의 미세구조 및 전기적 성질

남춘우,박춘형 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.6

The microstructure and electrical properties of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_{3}$ based varistors were investigated with Er$_{2}$/O$_{3}$ additive content of the range 0.0 to 2.0 mol%. Most of the added Er$_{2}$/O$_{3}$ were segregated at the nodal points and grain boundaries and it coexisted with Pr$_{6}$/O$_{11}$ in the bulk intergranular layer. The average grain size was decreased in the range of 7.44 to 5.62${\mu}{\textrm}{m}$ at 130$0^{\circ}C$ and 18.36 to 9.11 at 135$0^{\circ}C$ with increasing Er$_{2}$/O sub 3/ additive content. The density of ceramics was in the range 4.87 to 5.08 g/cm$^3$ at 130$0^{\circ}C$ and 5.35 to 5.62 g/cm$^3$at 135$0^{\circ}C$. At 130$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited 29.66 in the nonlinear exponent and 28.23 $\mu$A in the leakage current whereas the varistors with 0.5 mol% Er$_{2}$/O$_{3}$ exhibited a high nonlinearity which is 52.78 in thenonlinear exhibited and 9.75 $\mu$A in the leakage current. At 135$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited a very poor nonlinearity indicating 2.08 in the nonlinear exponent and 133.79 $\mu$A in the leakage current whereas the varistors with 1.0mol% Er$_{2}$/O$_{3}$ exhibited a relatively high nonlinearity which is 36.79 in the nonlinear exponent and 5.92 $\mu$A in the leakage current. Therefore Er$_{2}$/O$_{3}$ was additive which greatly improve the nonlinearity. It is believed that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based ceramicss will be usefully used as a basic composition to develop the advanced pr$_{6}$/O$_{11}$-based ZnO varistors.ristors.ristors.

ZnO-${Pr_6}{O_{11}}$-CoO-${Er_2}{O_3}$계 바리스터의 안정성에 관한 연구

남춘우 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8

The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.

ZPCCE계 바리스터의 미세구조와 전기적 성질 및 안정성

남춘우,윤한수,류정선 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.9

The electrical procerties and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$ (ZPCCE) based varistors were investigated in the Er$_2$O$_3$content range of 0.0 to 4.0 mol%. ZPCCE ceramics containing 2.0 mol% Er$_2$O$_3$ exhibited the highest density of 5.74 g/㎤ corresponding to 99.3% of theoretical density. The varistors with 0.5 mol% and 2.0 mol% Er$_2$O$_3$exhibited a relatively satisfying nonlinearity, which the nonlinear exponent is 40.50 and 47.15, respectively and the leakage current is 2.66 $mutextrm{A}$, respectively. Under more severe d.c. stress, such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$12h), they showed a very excellent stability, which the variation rate of the variator voltage is -0.89% and -0.15%, the variation rate of the nonlinear coefficient is -4.67% and -3.56%, and the variation rate of leakage current is -6.02% and -19.56%, respectively. It is surely bellived that ZnO-0.5 mol% Pr$_{6}$O$_{11}$-1.0 mol% CoO-0.5 mol% Cr$_2$O$_3$-x mol% Er$_2$O$_3$(x=0.5, 2.0) based varistors will be greatly contributed to develop the advanced Pr$_{6}$O$_{11}$-based ZnO varistors in future.uture. future.uture.

$Nd_24$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 미세구조 및 전기적 성질

남춘우,박춘현,윤한수 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.3

The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.

Al, Au 쇼트키 접촉의 열처리에 따른 GaAs MESFET의 전기적 특성

남춘우,박창엽 한국전기전자재료학회 1993 電氣電子材料學會誌 Vol.6 No.6

단층 금속 Al, Au 게이트 MESFET를 제작하여 열처리에 따른 쇼트키 계면에서의 상호확산 상태와 그에 따른 쇼트키 접촉특성 및 MESFET의 전기적 특성을 조사하였다. Al 및 Au 쇼트키 계면의 상호확산은 as-deposited 상태에서도 나타났으며 열처리 온도가 증가함에 따라 상호확산의 정도는 Au 접촉이 Al 접촉보다 컸다. 특히 Au 접촉에서 Ga의 외부확산이 현저했다 .Al 및 Au 게이트에 있어서 공통적으로 열처리 온도 증가에 따라 포화드레인 전류와 핀치오프 전압은 감소하였고 개방채널 저항은 증가하였으며 변화폭은 Au 게이트가 Al 게이트보다 컸다. Al 및 Au 접촉의 장벽높이는 as-deposited 상태에서 각각 0.70eV, 0.73eV로 페르미 준위는 1/2Eg 근처에 피닝되었다. Al 및 Au 접촉에 있어서 열처리 온도 증가에 따라 장벽높이는 각각 증가, 감소하였으며 이상계수는 각각 감소, 증가하였다. Al 접촉의 경우 열처리를 행함으로서 쇼트키 접촉특성이 개선됨을 확인할 수 있었다.

Zn-Pr-Co-Cr-Dy 산화물계 바리스터의 전기적, 유전적 특성

남춘우,박종아,김명준,류정선 한국세라믹학회 2003 한국세라믹학회지 Vol.40 No.10

Dy$_2$ $O_3$의 첨가량이 0.0∼2.0 ㏖% 범위인 Zn-Pr-Co-Cr-Dy 산화물계 바리스터의 미세구조 및 전기적 특성을 조사하였다. Dy$_2$ $O_3$의 첨가량을 증가시킴에 따라 평균 결정립 크기는 18.2∼4.6 $\mu\textrm{m}$ 범위로 감소하였으며, 세라믹스 밀도는 5.49∼4.64 g/㎤ 범위로 감소하였다 Dy$_2$ $O_3$가 첨가된 바리스터는 Dy$_2$ $O_3$가 첨가되지 않은 바리스터에 비해 비직선 지수가 9배이상 증가하는 현저한 비직선성의 증가를 나타내었다. 0.5∼l.0 ㏖% 범위의 Dy$_2$ $O_3$가 첨가된 바리스터는 비직선 지수가 55 이상이고 누설전류가 1.0 $\mu\textrm{A}$ 이하의 높은 비직선성을 나타내었다. C-V특성에 있어서, 도너농도 및 계면상태밀도는 Dy$_2$ $O_3$의 첨가량 증가에 따라 각각 (4.66∼0.25)${\times}$$10^{18}$/㎤, (5.70∼1.39)${\times}$$10^{12}$/$\textrm{cm}^2$ 범위에서 감소하는 경향을 나타내었다. 유전손실계수는 Dy$_2$ $O_3$의 첨가량 증가에 따라 0.5 ㏖% 첨가시 최소치 0.0023을 정점으로 하여 다시 증가하는 경향을 나타내었다. The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.