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Ar/O<sub>2</sub>비에 따른 (Ba<sub>1</sub>Sr)(Nb<sub>1</sub>Ti)O<sub>3</sub>[BSNT] 박막의 구조적 특성
남성필,이상철,이영희,이성갑 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.4
In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.
Electrical Properties of (Bi,Y)4Ti3O12 Thin Films Grown by RF Sputtering Method
남성필,이성갑,Seon-Gi Bae,Young-Hie Lee 대한전기학회 2007 Journal of Electrical Engineering & Technology Vol.2 No.1
- Yttrium(Y)-substituted bismuth titanate (Bi4-xYx)Ti3O12 [x=0, 0.25, 0.5, 0.75, 1] (BYT)thin films were deposited using an RF sputtering method on the Pt/TiO2/SiO2/Si substrates. The structural properties and electrical properties of yttrium-substituted (Bi4-xYx)Ti3O12 thin films were analyzed. The remanent polarization of (Bi4-xYx)Ti3O12 films increased with increasing Y-content. The (Bi3.25Y0.75)Ti3O12 films fabricated using a top Au electrode showed saturated polarization-electric field (P-E) switching curves with a remanent polarization (Pr) of 8 μC/cm2 and coercive field (Ec) of 53 3.25Y0.75)Ti3O12 films exhibited fatigue-free behavior up to 4.51011 read/write switching cycles at a frequency of 1MHz.
남성필,이성갑,Young-Hie Lee 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.2
V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by an RF sputtering method exhibited fairly good and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constant of the V1.9W0.1O5 thin film annealed at 300℃ was 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300℃ were about -3.6%/K.
Structural and pyroelectric properties of YBa2Cu3O6+x for the uncooled infrared detectors
남성필,Hyun-Ji Noh,이성갑 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.6
The uncooled pyroelectric infrared based on semiconductor YBa2Cu3O6+x (YBCO) have been investigated. YBCO powder was prepared by a mixed oxide method and YBCO thick films were fabricated by the screen-printing method. The YBCO thick films were sintered at 820-945℃. As a result of the Thermogravimetry and differential thermal analysis (TG-DTA), endothermic peak was observed at around 800℃ due to the formation of the tetragonal phase. YBCO thick films showed the typical XRD patterns of tetragonal phase and second phase was observed. The average particle size of YBCO thick films was about 1.67 μm. The thickness of the YBCO thick films was about 60 μm. The temperature coefficient of resistance (TCR = 1/R* dR/dT) of 930℃-20min sintered YBCO thick films was −2.3% and the pyroelectric coefficient was 511.1 × 10−7 C/㎠K.
텅스텐 첨가에 따른 V<SUB>2-n</SUB>W<SUB>n</SUB>O? 박막의 구조적, 전기적 특성
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.10
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.5
The heterolayered PZT/PT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of PbTiO₃ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the BaTiO₃ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared PbTiO₃ coating solution at interface of the PZT thick films. The insertion of PbTiO₃ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of PbTiO₃ layers. The leakage current density of the PZT/PbTiO₃-1 film is less that 4.41x10?? A/㎠ at 5 V.
남성필(Sung-Pill Nam),이승환(Seung-Hwan Lee),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2009 전기학회논문지 Vol.58 No.12
The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT/BNT thick films. The dielectric properties of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and 12.63 μC/㎠.