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남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.5
The heterolayered PZT/PT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of PbTiO₃ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the BaTiO₃ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared PbTiO₃ coating solution at interface of the PZT thick films. The insertion of PbTiO₃ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of PbTiO₃ layers. The leakage current density of the PZT/PbTiO₃-1 film is less that 4.41x10?? A/㎠ at 5 V.
텅스텐 첨가에 따른 V<SUB>2-n</SUB>W<SUB>n</SUB>O? 박막의 구조적, 전기적 특성
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.10
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.
비냉각 적외선 감지소자 응용을 위한 V₂O? 박막의 전기적 특성
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
The V₂O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V₂O? thin films annealed at 300t were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V₂O? thin films annealed at 300t were about -2.65%/K.
남성필(Sung-Pill Nam),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
The sandwiched PZT/BaTiO₃/PZT thick films were fabricated by two different methods . thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of BaTiO₃ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the BaTiO₃ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared BaTiO₃ coating solution at interface of the PZT thick films. The insertion of BaTiO₃ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of BaTiO₃ layers. The leakage current density of the PZT/BaTiO₃-1 film is less that 4.41×10?? A/㎠ at 5V.
남성필(Sung-Pill Nam),이승환(Seung-Hwan Lee),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2009 전기학회논문지 Vol.58 No.12
The heterolayered BT/BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered tetragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT/BNT thick films. The dielectric properties of the heterolayered BT/BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT/BNT thick films were 1455, 0.025 and 12.63 μC/㎠.
텅스텐을 첨가한 V<SUB>2-x</SUB>W<SUB>x</SUB>O? 박막의 전기적 특성
남성필(Sung-Pill Nam),노현지(Hyun-Ji Noh),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bea),이영희(Young-Hie Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the V<SUB>1.85</SUB>W<SUB>0.15</SUB>O? thin films annealed at 400℃ were about -3.45%/K.
LiCO₃가 첨가된 (Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>)TiO₃ 후막의 전기적 특성
남성필(Sung-Pill Nam),박인길(In-Gil Park),이성갑(Sung-Gap Lee),배선기(Seon-Gi Bae),이영희(Young-Hie Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
Li₂CO₃ doped Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO₃ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of Li₂CO₃ dopants at BST. Structure of Li₂CO₃ doped Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>)TiO₃ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing Li₂CO₃ doping rations. In the case of the 3wt% Li₂CO₃ doped Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>)TiO₃ ceramics sintered at 900℃, relative permittivity and dielectric loss were 907 and 0.003 at 100 ㎑.