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조선총독부 고등법원의 토지소유권 판결(1918~1921)과 그 성격
남기현 수선사학회 2020 史林 Vol.0 No.72
The High Court of Governor-General of Korea, the highest court of Joseon under Japanese rule, ruled that “administrative measure based land ownership (“administrative ownership”)” established by the Land Survey Project and “judicial decision based land ownership (“judicial ownership”)” are valid. This ruling was inconsistent with the policy of the Governor-General of Korea, which tried to regard only “administrative ownership” as an absolute right. The High Court judged that the “administrative ownership” was confirmed by the <Land Survey Ordinance>, and the “judicial ownership” was confirmed by the <Code of Civil Procedure> of Japan in 1918. Furthermore, the High Court ruled that “judicial ownership” is registrable as it was the right established by due process. It was a contradiction that two ownerships existed on one land, which occurred as two statutes of different systems were applied simultaneously in Joseon under Japanese rule. In 1921, a lawsuit was proceeded at the request of redefining the relationship between the two ownerships. The High Court had to judge the claim that “administrative ownership” was superior based on the first clause of Article 1 of <Regulations No. 16> in 1914. The united department of High Court judged the two rights are equal and independent that cannot be violated. The decision by the High Court, which was an internal institution of the colony, prevented the land ownership policy of Governor-General of Korea from being legally enforced until 1921. .
Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구
남기현,정홍배,Nam, Ki-Hyun,Chung, Hong-Bay 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.
남기현,원성옥,허일 국립특수교육원 2010 특수교육연구 Vol.17 No.1
본 연구는 한국수화의 동사 유형에 따른 무표 명사구(bare noun phrase)의 의미 해석과 논항의 수 표현을 고찰하였다. 농인과의 인터뷰를 통해서 농인들의 언어적 직관에 기초하여 문법성 판단을 이끌어내었다. 연구 결과, 한국수화의 무표 명사구의 단수.복수 해석은 동사 유형에 따라 차이가 없었으며 단수로 해석되었다. 또한 무표 명사구의 의미 해석에서는 언어외적 지식도 관여하였다. 또한 수사(numeral)가 포함된 문장에서 논항의 수에 대응하는 동사의 굴절은 잉여적이며 특히 4 이상의 복수를 표현하기 위해서는 정확한 수 표현을 사용하였다. 본 연구는 수화 동사의 교차-언어적 연구에 또 하나의 언어 자료를 제공하는데 의의가 있다. 더 나아가, 한국수화를 사용하는 농인들과의 보다 명확한 의사소통을 필요로 하는 청인들과 한국수화를 사용하는 농 학생들에게 한국어를 가르치는 교사들에게 수 표현에서 한국수화와 한국어의 언어적 차이에 대한 자료를 제공한다. This study explored meaning interpretations of bare noun phrases and number expressions of arguments, according to verb types in Korean Sign Language(hereinafter, KSL). Through interviews with deaf people, grammaticality judgment was elicited from linguistic intuitions possessed by deaf people. Results indicated that singular and plural interpretation of bare noun phrases showed no difference according to verb types and was interpreted as singular. In meaning interpretations of bare noun phrases, extralinguistic knowledge was also involved. In sentences including the numeral, verb inflections corresponding to the number of arguments was redundant; especially, exact number expression was used in order to express plurality greater than 4. This study is significant in that it provides another linguistic data to cross-linguistic study of verbs in Sign Languages. In addition, this study affords data on the differences between KSL and Korean in numeral expressions: firstly to hearing people who need to communicate more clearly with KSL-using deaf people and secondly to instructors who teach Korean to deaf students who use KSL.
Sb 광도핑에 의한 Ge1Se1Te2 박막의 상변화 메모리 특성
남기현,정홍배,김장한 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of Ge1Se1Te2 material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory. 상변화 메모리에 있어서 좋은 기록성과 낮은 열 손실, 빠른 결정화 특성과 retention 시간 등이 요구된다. 우리는 지난 연구를 통해 일반적으로 쓰이는 Sb을 대신하여 광에 민감한 Se를 첨가한 Ge1Se1Te2 매질을 이용하였다. Sb/Ge-Se-Te 박막은 Ge1Se1Te2 박막에 UV에 의한 Sb 광도핑을 하여 제작하였다. Sb를 도핑시킴으로써 보다 나은 스위칭 특성을 확인할 수 있었고, 보다 우수한 상변화 메모리로의 가능성을 확인하였다.