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XRD와 XAS에 의한 TiO<sub>2</sub> 분말의 상분율 결정
나사균,이연승,Rha, Sa-Kyun,Lee, Youn Seoung 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.5
The crystallinity and phase ratio of anatase to rutile in $TiO_2$ were estimated by x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS). Traditionally, the structural characterization of $TiO_2$ powders has been carried out by XRD techniques, which are comparatively easy in use and analysis. However, materials with amorphous phase, nano-sized or nano-structured crystallinities cannot be fully characterized by XRD because XRD analysis has a limit for abnormal contributions of the nano-crystal such as the surface contribution. From the comparison with the experimental and calculated Ti K-edge XAS spectra, we found the possibility of efficient estimation in the crystalinites and the phase ratio of anatase to rutile for nano-sized $TiO_2$ mixture.
초고집적소자의 층간절연막용 polysilazane계 spin on glass (SOG)에 관한 연구
나사균,정석철,이재관,김진우,홍정의,이원준 대전산업대학교 반도체기술연구소 2000 半導體技術硏究所報 Vol.2 No.-
초고집적소자의 층간절연막으로서의 polysilazane계 spin on glass (SOG)의 적용 가능성을 평가하였다. 상용화된 무기 SOG 계열의 polysilazane과 polysilazane에 산화제를 첨가하여 SiO_2로의 변환 능력을 향상시킨 물질을 spin coating하고 curing하여 SOG 막을 제조한 다음, 400℃에서 900℃까지의 온도범위에서 열에 SOG막을 형성하여 gapfill 특성을 비교하였으며, SOG막에 contact hole을 형성한 다음 습식 세정에 대한 저항성을 평가하였다. 산화제를 첨가함으로써 polysilazane polymer 구조에서 SiO_2로의 변환이 더욱 효과적으로 이루어져, 기존 SOG 막에 비해 밀도 및 습식세정 chemical에 대한 저항성이 우수하고거 gapfill 특성은 동등한 수준인 SOG 막을 제조할 수 있었다. 특히, 기존의 SOG 막의 경우 좁은 gap space 내에서 curing이 충분하게 이어나지 않아 습식 세정시 hole profile이 나빠지는 문제를 산화제 첨가를 통해 해결할 수 있었다. We have investigated the feasibility of spin on glass (SOG) film from polysilazane-type resin as a premetal dielectric (PMD) layer of the next-generation ultra-large scale integrated (ULSI) devices. A commercial polysilazane resin and a polysilazane-type resin with oxidzing agent were spin-coated and cured to form SOG films. In order to study the effect of oxidizing agent and annealing, the SOG films were characterized as cured and after annealing at 400℃ to 900℃. The density and the resistance against wet chemical of the SOG films were improved by the addition of oxidizing agent, because oxidizing agent enhanced the conversion from polysilazane polymer to siO_2. The hole profile issue associated with insufficient curing of polysilazane innarrow gaps was alao resolved by oxidizing agent, while the gapfill capability of SOG was not deteriorated by oxidizing agent.
나사균,이연승 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.5
The crystallinity and phase ratio of anatase to rutile in TiO2 were estimated by x-ray diffraction (XRD) and x-ray absorption spectroscopy (XAS). Traditionally, the structural characterization of TiO2 powders has been carried out by XRD techniques, which are comparatively easy in use and analysis. However, materials with amorphous phase, nano-sized or nano-structured crystallinities cannot be fully characterized by XRD because XRD analysis has a limit for abnormal contributions of the nano-crystal such as the surface contribution. From the comparison with the experimental and calculated Ti K-edge XAS spectra, we found the possibility of efficient estimation in the crystalinites and the phase ratio of anatase to rutile for nano-sized TiO2 mixture.
나사균,Guozhong Cao,이연승,이원준,Tammy P. Chou 한국물리학회 2009 Current Applied Physics Vol.9 No.3
Silicon dioxide films were prepared on p-type Si (100) substrates by sol electrophoretic deposition (EPD) using tetraethylorthosilicate (TEOS) at low temperature. According to the variation of sol dipping conditions, we estimated the characteristics of SiO2 films, such as composition, surface morphology, wet etch rate, breakdown voltage, etc. The growth rate of the film increased linearly with increasing TEOS quantity in solution. It increased exponentially with the increase in deposition time, and the film thickness was saturated at approximately 200 nm on hydrophilic Si surface after more than 6 days. The growth rate of the EPD SiO2 films on the hydrophobic Si surface was much lower than that of the film on the hydrophilic Si surface. Silicon dioxide films were prepared on p-type Si (100) substrates by sol electrophoretic deposition (EPD) using tetraethylorthosilicate (TEOS) at low temperature. According to the variation of sol dipping conditions, we estimated the characteristics of SiO2 films, such as composition, surface morphology, wet etch rate, breakdown voltage, etc. The growth rate of the film increased linearly with increasing TEOS quantity in solution. It increased exponentially with the increase in deposition time, and the film thickness was saturated at approximately 200 nm on hydrophilic Si surface after more than 6 days. The growth rate of the EPD SiO2 films on the hydrophobic Si surface was much lower than that of the film on the hydrophilic Si surface.
자전연소합성법으로 제조된 SiO<sub>2</sub> 첨가된 MoSi<sub>2</sub> 분말 내에서의 SiO<sub>2</sub>의 거동 연구
나사균,전민석,송준광,한동빈,정철원,김성수,이연승,Rha, Sa-Kyun,Jeon, Min-Seok,Song, Jun-Kwang,Han, Dong-Bin,Jeong, Cheol-Weon,Kim, Sung-Soo,Lee, Youn-Seoung 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.6
In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.
무전해 Ni 도금을 위한 양극 산화막위에 스크린 인쇄된 Ag 페이스트 패턴의 정밀도 개선
이연승,나사균,Lee, Youn-Seoung,Rha, Sa-Kyun 한국재료학회 2017 한국재료학회지 Vol.27 No.8
We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.
DMAB첨가량에 따른 연성회로기판을 위한 무전해 Ni 도금박막에 관한 연구
김형철,나사균,이연승,Kim, Hyung-Chul,Rha, Sa-Kyun,Lee, Youn-Seoung 한국재료학회 2014 한국재료학회지 Vol.24 No.11
We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at $50^{\circ}C$. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with < 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of $50^{\circ}C$.