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Sulfurization 온도와 Cu/(In+Ga) 비가 Cu(In,Ga)Se<sub>2</sub> 박막 내 S 함량에 미치는 영향
고영민,김지혜,신영민,안병태,Ko, Young Min,Kim, Ji Hye,Shin, Young Min,Chalapathy, R.B.V.,Ahn, Byung Tae 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.
Sulfurization 온도와 Cu/(In+Ga) 비가 Cu(In,Ga)Se₂ 박막 내 S 함량에 미치는 영향
고영민(Young Min Ko),김지혜(Ji Hye Kim),신영민(Young Min Shin),R. B. V. Chalapathy,안병태(Byung Tae Ahn) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
It is known that sulfide at the Cu(In,Ga)Se₂ (CIGSe₂) surface plays a positive role in CIGSe₂ solar cells. We investigated the substitution of S with Se on the CIGSe₂ surface in S atmosphere. We observed that the sulfur content in the CIGSe₂ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the CIGSe₂ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the CIGSe₂ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as 200°C. The cell performance was improved at 200°C sulfurization.