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SPECIAL 3 - 중국의 최근 시멘트 시장 동향 및 향후 전망
김이철,Kim, Lee-Cheol 한국시멘트협회 2013 시멘트 Vol.197 No.-
중국은 2012년 현재 시멘트 22억톤을 생산 소비하고 전세계 시멘트 생산의 60%를 차지하는 시멘트 최대 생산 소비국으로 급속한 국가경제발전과 함께 시멘트산업 역시 급성장하고 있는 대표적인 국가이다. 한편 우리나라는 시멘트 생산, 소비 면에서 세계 10위권 내의 국가임에도 규모면에서 중국의 2%에도 미치지 못하고 있다. 중국과 최근 거리에 있다는 현실을 감안할 때 향후 중국의 수급 불균형과 정책 변화에 따라 국내 시멘트 시장의 위험효소가 내재된 지정학적인 요건을 갖고 있다. 이에 최근 중국 시멘트 시장 및 기업 동향과 향후 전망을 통해 국내 시멘트시장의 현주소를 둘러보고 대비하는 계기가 되었으면 한다.
김다운,김기용,김희경,김주은,전순정,이철원,이향범,윤성환 한국식물병리학회 2016 Plant Pathology Journal Vol.32 No.3
Together with the Fusarium graminearum species complex, F. culmorum is a major member of the caus-al agents of Fusarium head blight on cereals such as wheat, barley and corn. It causes significantyield and quality losses and results in the contamination of grain with mycotoxins that are harmful to humans and animals. In Korea, F. culmorum is listed as a quaran-tine fungal species since it has yet to be found in the country. In this paper, we report that two isolates (J1 and J2) of F. culmorum were collected from the air at a rice paddy field in Korea. Species identification was confirmed by phylogenetic analysis using multi-locus sequence data derived from fivegenes encoding translation elongation factor, histone H3, phosphate permease, a reductase, and an ammonia ligase and by morphological comparison with reference strains. Both diagnostic PCR and chemical analysis confirmedthat these F. culmorum isolates had the capacity to produce nivalenol, the trichothecene mycotoxin, in rice substrate. In addition, both isolates were patho-genic on wheat heads and corn stalks. This is the firstreport on the occurrence of F. culmorum in Korea.
Dry Etching of High-k Dielectric Thin Films in HBr/Ar Plasma
김동표,김관하,우종창,Hwan-Jun Kim,이철인,Sewung-Kwon Lee,Tae-Woo Jung,Seung-Chan Moon,Sang-Wook Park,김창일 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
High-k thin films (HfO2 and Al2O3) were etched in HBr/Ar high-density plasma. HfO2 and Al2O3 with high dielectric constants are promising candidates for the gates of metal-oxide-semiconductor devices. The maximum etch rates for HfO2 and Al2O3 were 49.1 nm/min and 42.5 nm/min, respectively. The etch rates of both HfO2 and Al2O3 thin films were faster for higher contents of HBr. The chemical states of high-k thin films were investigated using X-ray photoelectron spectroscopy. The comparisons of the as-deposited and the etched thin films for Hf 4f, Al 2p and O 1s showed few changes in the peak shapes and their binding energies were moved to higher energy after exposure to a HBr plasma. No new peaks due to etching byproducts appeared. Clean side wall and the steep etch profiles for high-k thin films could be obtained using a 100 % HBr plasma. These results indicate that HfO2 and Al2O3 thin films can be effectively removed by using a chemical etching process.
Cl<sub>2</sub>CF<sub>4</sub>/Ar 유도결합 플라즈마에 의해 식각된 SBT 박막의 표면 손상
김동표,김창일,이철인,김태형,이원재,유병곤 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.7
$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.
$CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구
김동표,김창일,이철인 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.12
We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).