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Zn<sub>2-2x</sub>Si<sub>1+x</sub>O<sub>4</sub> 세라믹스의 소결 및 마이크로파 유전 특성
윤상옥,김윤한,김소정,조소라,김신,Yoon, Sang-Ok,Kim, Yun-Han,Kim, So-Jung,Jo, So-Ra,Kim, Shin 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.7
Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.