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김성만(S. M. Kim),임재영(J. Y. Leem),이철로(C. R. Lee),노삼규(S. K. Noh),신장규(J. K. Shin),권영수(Y. S. Kwon),유연희(Y. H. Ryu),손정식(J. S. Son),김지언(J. E. Kim) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(1)
MBE 방법을 이용하여 [011] 방향으로 2˚ 기울어진 GaAs 기판 위에 InAs 에피층 성장을 연구하였다. InAs 에피층의 결정성은 GaAs의 완충층의 두께가 약 2500 Å일 때 가장 좋은 특성을 나타내고 있었다. 한편 As BEP 및 Si cell 온도 등의 성장조건을 변화시키면서 성장한 시료에 대하여 Hall effect를 측정한 결과 As/In BEP 비가 1.2~2.0의 영역일 때 가장 높은 이동도를 가지는 InAs 에피층을 얻을 수 있었다. Si 도우핑에 의해 전자농도가 증가함에 따라 이동도는 증가하다가 Si cell 온도 960℃ (ND=2.21×10^(17) cm-³)를 기점으로 감소하는 경향을 나타내고 있다. Si 의 전자농도가 ND=2.21×10^(17) cm-³일 때 이동도가 1.10×10⁴ ㎠/V.s 로 가장 높게 나타나고 있었다. We studied the properties of the InAs epitaxial layers grown on (100)-oriented GaAs (2° tilted toward [011]) by molecular beam epitaxy. From DCX (double-crystal x-ray), the better crystal quality was shown in InAs epitaxial layers on about 2500 Å GaAs buffer among the different buffer thickness. On the other hand, by changing As HEP and Si cell temperature in growing InAs epitaxial layers on GaAs, we obtained the high mobility of InAs epitaxy in As/In HEP ratio (1.2~2.0) from Hall effect measurement. The electron mobility increased as electron concentration increases, until Si cell temperature 960℃ (ND=2.21×10^(17) ㎝-³). The mobility decreases as the Si cell temperature increases, at the temperature over 960℃. We obtained the high mobility (1.10×10⁴㎠/V.s) at Si electron concentration of ND=2.21×10^(17) ㎝-³.
질소-프로판-공기분위기에서 저탄소 합금강의 침탄시 내부산화 특성에 미치는 가스조성의 영향
노용식,김성만,김영희,김한군,이상윤 ( Y . S . Roh,S . M . Kim,Y . H . Kim,H . K . Kim,S . Y . Lee ) 한국열처리공학회 1991 熱處理工學會誌 Vol.4 No.4
This study has been performed to investigate into the internal oxidation characteristics of low carbon steel with respect to the added amount of air in nitrogen-propane atmosphere after gas carburizing for various times at 930℃. The results obtained from the experiment are as follows ; (1) Optical micrographs have shown that the internal oxidation is unlikely to occur in the gas atmosphere without air and that oxidized zone in the outer surface layer is formed in the gas atmosphere with air revealing that the depth of oxidized zone increases with increasing the added amount of air. (2) The formation of internally oxidized zone in the outer surface layer has been found to be inhibited as Ni content increases, i, e, the amount of alloying element increases. (3) The depth of oxidation has been measured to increase with almost parabolically gas carburizing time of up to 6 hours.
권영수(Y. S. Kwon),임재영(J. Y. Leem),이철로(C. R. Lee),노삼규(S. K. Noh),유연희(Y. H. Ryu),최정우(J. W. Choe),김성만(S. M. Kim),이욱현(U. H. Lee),류동현(D. H. Ryu),이동한(D. H. Lee),박장환(Jang-Hwan Park) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(1)
MBE(Molecular Beam Epitaxy) 방법으로 InAS 양자점의 크기를 달리하여 성장한 lnAs 양자점의 구조적 특성과 분광학적 특성을 조사하였다. 구조적 특성은 AFM(Atomic Force Microscopy)으로 하였으며, 광학적 특성은 PL(Photoluminescence)로 수행하였다. AFM 측정결과 양자점의 밀도는 2 ML에서 최대 값인 1.1×10¹¹/㎠이다. 양자점의 크기가 증가함에 따라 PL 피크는 적색편이를 하고 있었다. 발광피크의 온도의존성을 조사한 결과 온도의 증가에 따라 발광피크는 낮은 에너지로 이동하였으며, 20 K에서 180 K 구간에서는 발광피크의 FWHM(Full Width at Half Maximum) 값은 감소하였으며, 180 K 이상의 온도에서는 온도의 증가에 따라 FWHM도 증가하였다. 한편 Arrehenius-type function으로 구한 활성화 에너지는 InAs 양자점의 크기가 증가함에 따라 증가하였다. We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecular Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value (1.1×10¹¹/㎠) at 2.0 ML. In the PL spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20 K~80 K is narrowing with increasing temperature. When temperature is over 180 K, the line-width starts to increase with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.
Fet O-Na2O-SiO2 계 슬라그의 열력학적 성질
이응조,현도빈,심재동,김성만 대한금속재료학회(대한금속학회) 1985 대한금속·재료학회지 Vol.23 No.3
As a fundamental study on the physicochemical properties of soda-bearing slags, an equilibrium measurement between hydrogen/water vapour mixtures and the soda-bearing stags of Fe_tO-Na₂O-SiO₂ternary system contained in solid iron crucible at 1400℃ has been made. From the results obtained, the activity of iron oxide and the ratio of Ferric to ferrous in (Fe^(3+)/Fe^(2+)) have been determined as a function of slag composition. The activity of iron oxide in this slag markedly deviated to the direction of N_(Na₂)O/N_(SiO₂)=⅔. In the view of ionic theory, the approximate validity of regular solution model for cations was examined to evaluate the thermodynamic properties of this ternary slag containing Na₂O. It was confirmed that the regular solution model was satisfied within experimental error except for extremely FeO rich region.