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n-CdS/p-Si 이종접합 태양전지의 전기적 특성에 관한 연구
이재형(Jae-Hyung Lee),김선보(Sun-Bo kim),유현민(Hyun-Min Ryu),이수호(Su-ho Lee) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
n-CdS/p-Si Juntion structure was fabricated by magnetron sputtering method of a target source of CdS and Boron dopped p-Si prime single cristal wafers annealed at a temperature of 200℃ by evaporator's heater. An annealing process where the sample was heated 250℃ to 400℃ on 4 steps in ambient N₂ for 3min by RTP( Rapid Thermal Processing). Annealing the CdS layers canbe benefitial in terms of the layer electrical properties. A CdS layer thickness and annealed temperature affecting the electrical characteristics were investigated the open voltage factor Measured by Optical Measurement Probe Station.