http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
진공침탄한 SCM 415 강의 기계적 성질에 관한 연구
김대욱(D.W.Kim),이영제(Y.Z.Lee),임병수(B.S.Lim) 한국자동차공학회 1998 한국자동차공학회 춘 추계 학술대회 논문집 Vol.1998 No.5_2
High cycle fatigue and dry wear characteristics of vaccum carburized low alloy steel, SCM415(0.149% C), were evaluated after various heat treatments including direct quenching, single reheat quenching and sub-zero treatment. Comparing the fatigue and wear characteristics of carburized specimens to those of hot annealed of reheat quenched specimens, the wear resistant property as well as bending fatigue limits of vacuum carburized steels were substantially superior to other heat treated steels. Test results indicated that the carburized and reheat treated specimens have higher fatigue limits than the carburized and direct-quenched specimens and the specimens followed by sub-zero treatment. The wear wolumes of sub-zero treated specimens with higher surface hardness show slightly lower values than those of non sub-zero treated specimens. This is attributed to the reduction of retained austenite amount of the surface and an increase of surface hardness by the sub-zero treatment effect.<br/>
이주원(J. W. Lee),최성수(S. S. Choi),김종우(J. W. Kim),정미영(M. Y. Jung),김대욱(D. W. Kim) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.2
Submicron aperture 제작 기술은 near field optical sensor 또는 liquid metal ion source에 응용될 수 있는 가능성으로 인해 흥미를 모으고 있다. 본 실험에서는 submicron aperture 제작에 대해 기술할 것이다. 먼저, 2 ㎛ 크기의 dot array를 광학 리소그라피 방법으로 패턴화하였다. KOH 비등방성 식각 방법으로 V-groove 형을 만든 후, 1000℃에서 600분 동안 건식 산화 작업을 거쳤다. 이 산화 과정에서 결정 방향에 따라 산화율이 달라지게 되는데 Si(111) 면은 Si(100)면에 비해 산화율이 커서 두꺼운 산화막이 형성되며, 이 막은 연이은 건식식각 과정에서 etch-mask로 활용된다. Reactive ion etching은 ICP (Inductively Coupled Plasma) 장비를 사용하였으며, V-groove의 바닥에 형성된 90 ㎚ 두께의 SiO₂와 그 아래의 Si을 식각하였다. 이 때, 기판에 걸린 negative bias는 Cl₂ RIE의 anisotropic etching 효과를 증대시키는 것 같았으며, SEM 촬영 결과 식각 후에 Si(111)면 위에는 약 130 ㎚ 정도의 산화층이 잔류하고 있었다. 이렇게 형성된 Si aperture는 향후 NSOM sensor 등에 적용될 수 있을 것이다. The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at 1000℃ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 ㎚ SiO₂ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the Cl₂ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 ㎚ by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.