http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 김가희(Kim Gahui) (검색결과 10 건)
- 무료
- 기관 내 무료
- 유료
-
O<sub>2</sub> 플라즈마 전처리 및 후속 열처리 조건이 Ti 박막과 WPR 절연층 사이의 계면 접착력에 미치는 영향
김가희,이진아,박세훈,박영배,Kim, Gahui,Lee, Jina,Park, Se-hoon,Park, Young-Bae 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.1
The effects of O<sub>2</sub> plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O<sub>2</sub> plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.
-
전류밀도에 따른 플립칩 Sn-Ag 솔더 범프의 Electromigration 손상기구 분석
김가희 ( Gahui Kim ),손기락 ( Kirak Son ),박규태 ( Gyu-tae Park ),박영배 ( Young-bae Park ) 대한금속ㆍ재료학회 2017 대한금속·재료학회지 Vol.55 No.11
The effect of current densities on the electromigration (EM) failure mechanism of flip chip Cu/Ni/Sn-Ag/Cu solder bumps was investigated under stressing conditions at current densities ranging from 5.0~6.9 × 10<sup>3</sup> A/cm<sup>2</sup> at 150 ℃. The EM failure times at 5.0 × 10<sup>3</sup> A/cm<sup>2</sup> were around 11 times longer than at 6.9 × 10<sup>3</sup> A/cm<sup>2</sup>. A systematic failure analysis considering stressing time showed that a current density of 5.0 × 10<sup>3</sup> A/cm<sup>2</sup> induced pancake void propagation near the Cu6Sn5 intermetallic compound/solder interface at the cathode, while a current density of 6.9 × 10<sup>3</sup> A/cm<sup>2</sup> produced severe Joule heating due to high current crowding near the solder/Cu<sub>6</sub>Sn<sub>5</sub> interface. This was due to electrons entering the location at the cathode, which led to local melting of the solder and fast Cu consumption. It was determined that the EM failure mechanisms of flip chip Sn-Ag solder strongly depend not only on the Ni barrier effect but also on current density, which drives the dominant failure mechanisms of pancake voiding and local Joule-heating melting. (Received May 11, 2017; Accepted August 16, 2017)
-
국내 외국인 유학생을 위한 통합 투어서비스 Camp_Around
김가희(Kim Gahui),한영서(Han Youngseo) 한국HCI학회 2024 한국HCI학회 학술대회 Vol.2024 No.1
캠퍼라운드는 웹과 앱을 통한 대학가 투어 정보 서비스로, 노션을 활용해 이미지, 지도, 키워드, 상세 텍스트로 대학가의 식당, 카페, 가볼만한 곳 등의 장소 정보를 제공한다. 부가로 커뮤니티 및 언어 학습 페이지를 제공하며 온/오프라인 홍보를 통해 서비스의 정체성을 높이고 마케팅 효과를 목표로 한다. 대학 협업과 서비스 운영진의 정기 행사를 통한 유료 멤버십 활성화가 장기 계획이다.
-
Ar/N<sub>2</sub> 2단계 플라즈마 처리에 따른 저온 Cu-Cu 직접 접합부의 정량적 계면접착에너지 평가 및 분석
최성훈,김가희,서한결,김사라은경,박영배,Choi, Seonghun,Kim, Gahui,Seo, Hankyeol,Kim, Sarah Eunkyung,Park, Young-Bae 한국마이크로전자및패키징학회 2021 마이크로전자 및 패키징학회지 Vol.28 No.2
The effect of Ar/N<sub>2</sub> two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N<sub>2</sub> 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N<sub>2</sub> 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m<sup>2</sup> and 2.33±0.67 J/m<sup>2</sup>, respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.
-
전문가 설문조사를 통한 자연재난 위험도분석 평가지표 활용 가능성에 대한 검토
김금지(Kim,Keumji),황정근(Hwang,Jeonggeun),김가희(Kim,Gahui),정도준(Jung,Dojoon) 한국방재학회 2021 한국방재학회논문집 Vol.21 No.1
최근 기후변화로 인한 극한기상의 빈번한 발생은 전 세계적으로 잠재적 위험발생 가능성을 증대시키고 있으며 우리나라도 이러한 재해위험에 지속적으로 노출되어 있다. 자연재난으로 인한 인명;재산 피해에 대한 사전 예측⋅평가 연구는 국가 및 지역별 피해 저감방안을 마련하는데 매우 중요하다. 하지만;현재 유관기관에서 수행하는 위험도분석 평가지표의 범위는 매우 광범위하고 지표선정에 대한 일관된 기준이 없어 한계가 있다. 이러한 관점에서 본 연구는 선행연구에서 빈번히 사용된 평가지표를 포함하여 118개의 대리지표를 선정하고 활용 가능성을 검토하기 위하여 52명의 재난⋅재해분야 전문가들을 대상으로 설문조사를 실시하였다. 전문가 설문조사 결과;37개의 지표가 ‘적극 추천’으로;54개의 지표가 ‘추천’ 지표로 분석되어 대리지표의 활용 가능성을 검토할 수 있었으며;위험도분석 평가지표 수집을 위한 제언을 통해 향후 국가 및 지자체 방재계획 수립 시 활용 가능한 평가지표 선정방안을 제시하였다. In recent years;the frequent occurrence of extreme weather due to climate change has increased the possibility of potential danger across the world. Additionally;South Korea has been consistently exposed to disaster risk. Studies on the prediction of damage from natural disasters are critical for the government and local governments to formulate disaster recovery policies. However;the scope of risk analysis evaluation indicators currently utilized by the relevant organizations comprises limitations;as there are no consistent standards for indicator selection. From this viewpoint;this study selected 118 surrogate indicators;including indicators frequently used in previous studies;and conducted a survey with 52 experts in the disaster field to examine the possibility of use of these indicators. As a result of the expert survey;37 indicators were analyzed as “very appropriate” and 54 indicators were analyzed as “appropriate” regarding their possibility of use. Finally;we suggested four natural disaster risk assessment methods;which can be used in policymaking by the government and local governments in the future.
-
서한결,박해성,김가희,박영배,김사라은경,Seo, Hankyeol,Park, Haesung,Kim, Gahui,Park, Young-Bae,Kim, Sarah Eunkyung 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.3
The recent semiconductor packaging technology is evolving into a high-performance system-in-packaging (SIP) structure, and copper-to-copper bonding process becomes an important core technology to realize SIP. Copper-to-copper bonding process faces challenges such as copper oxidation and high temperature and high pressure process conditions. In this study, the bonding interface quality of low-temperature copper-to-copper bonding using a two-step plasma treatment was investigated through quantitative bonding strength measurements. Our two-step plasma treatment formed copper nitride layer on copper surface which enables low-temperature copper bonding. The bonding strength was evaluated by the four-point bending test method and the shear test method, and the average bonding shear strength was 30.40 MPa, showing that the copper-to-copper bonding process using a two-step plasma process had excellent bonding strength.
-
미세 배선 적용을 위한 Ta/Cu 적층 구조에 따른 계면접착에너지 평가 및 분석
손기락,김성태,김철,김가희,주영창,박영배,Son, Kirak,Kim, Sungtae,Kim, Cheol,Kim, Gahui,Joo, Young-Chang,Park, Young-Bae 한국마이크로전자및패키징학회 2021 마이크로전자 및 패키징학회지 Vol.28 No.1
The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.
-
미세 Cu 배선 적용을 위한 SiNx/Co/Cu 박막구조에서 Co층이 계면 신뢰성에 미치는 영향 분석
이현철(Hyeonchul Lee),정민수(Minsu Jeong),김가희(Gahui Kim),손기락(Kirak Son),박영배(Young-Bae Park) 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.3
The effect of Co interlayer on the interfacial reliability of SiNx/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiNx/Cu thin film structure was 0.90 J/㎡. This value of the SiNx/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiNx/Co/Cu structure was around 10 times higher than SiNx/Cu structure due to CoSi2 reaction layer formation at SiNx/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiNx/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiNx/Co interface. Therefore, it is required to control the CoO and Co3O4 formation during the environmental storage of the SiNx/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections. 비메모리 반도체 미세 Cu배선의 전기적 신뢰성 향상을 위해 SiNx 피복층(capping layer)과 Cu 배선 사이 50 nm 두께의 Co 박막층 삽입이 계면 신뢰성에 미치는 영향을 double-cantilever beam (DCB) 접착력 측정법으로 평가하였다. DCB 평가 결과 SiNx/Cu 구조는 계면접착에너지가 0.90 J/㎡이었으나 SiNx/Co/Cu 구조에서는 9.59 J/㎡으로 SiNx/Cu 구조보다 약 10배 높게 측정되었다. 대기중에서 200℃, 24시간 동안 후속 열처리 진행한 결과 SiNx/Cu 구조는 0.93 J/㎡으로 계면접착에너지의 변화가 거의 없는 것으로 확인되었으나 SiNx/Co/Cu 구조에서는 2.41 J/㎡으로 열처리 전보다 크게 감소한 것을 확인하였다. X-선 광전자 분광법 분석 결과 SiNx/Cu 도금층 사이에 Co를 증착 시킴으로써 SiNx/Co 계면에 CoSi2 반응층이 형성되어 SiNx/Co/Cu 구조의 계면접착에너지가 매우 높은 것으로 판단된다. 또한 대기중 고온에서 장시간 후속 열처리에 의해 SiNx/Co 계면에 지속적으로 유입된 산소로 인한 Co 산화막 형성이 계면접착에너지 저하의 주요인으로 판단된다.
-
-
ScienceON
스콜라연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
