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저온 중수소 어닐링을 활용한 Enclosed-Layout Transistors (ELTs) 소자의 제작 및 전기적 특성분석
왕동현 ( Dong-hyun Wang ),김동호 ( Dong-ho Kim ),길태현 ( Tae-hyun Kil ),연지영 ( Ji-yeong Yeon ),김용식 ( Yong-sik Kim ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.1
The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using hightemperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and off-state current (IOFF). Moreover, the LTDA is perfectly compatible with CMOS processes.
저온 열처리를 통한 MOSFETs 소자의 방사선 손상 복구
박효준 ( Hyo-jun Park ),길태현 ( Tae-hyun Kil ),연주원 ( Ju-won Yeon ),이문권 ( Moon-kwon Lee ),윤의철 ( Eui-cheol Yun ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.5
Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.
다중 공정변수를 활용한 저비용 PUF 보안 Chip의 제작
지홍석 ( Hong-seock Jee ),손돌 ( Dol Sohn ),연주원 ( Ju-won Yeon ),길태현 ( Tae-hyun Kil ),박효준 ( Hyo-jun Park ),윤의철 ( Eui-cheol Yun ),이문권 ( Moon-kwon Lee ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.5
Physically Unclonable Functions (PUFs) provide a high level of security for private keys using unique physical characteristics of hardware. However, fabricating PUF chips requires numerous semiconductor processes, leading to high costs, which limits their applications. In this work, we introduce a low-cost manufacturing method for PUF security chips. First, surface roughening through wet-etching is utilized to create random variables. Additionally, physical vapor deposition is added to further enhance randomness. After PUF chip fabrication, both Hamming distance (HD) and Hamming weight (HW) are extracted and compared to verify the fabricated chip. It is confirmed that the PUF chip using two different multiple process variables demonstrates superior uniqueness and uniformity compared to the PUF security chip fabricated using only a single process variable.
고압 중수소 어닐링을 통한 SiO<sub>2</sub> 절연체의 균일성 개선
김용식 ( Yong-sik Kim ),정대한 ( Dae-han Jung ),박효준 ( Hyo-jun Park ),연주원 ( Ju-won Yeon ),길태현 ( Tae-hyun Kil ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2
As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.