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곽영제 한국고분자학회 2008 Macromolecular Research Vol.16 No.3
A new strategy using protection-deprotection chemistry was used to prepare branched polymers using the ATRP method only. Among the several monomers with different protecting groups, vinyl benzyl t-butyloxy carbonate (VBt-BOC) and 4-methyl styrene (4-MeSt) could be polymerized successfully to form backbones using the ATRP method in a controlled fashion. The protected groups in the backbones were converted to alkyl bromides and used as initiating sites for branch formation. The benzyl t-butyloxy carbonate groups in the backbones containing VBt-BOC units were first deprotected to benzyl alcohol by trifluoroacetic acid, then converted to benzyl bromide by reacting them with triphenylphosphine/carbon tetrabromide. The benzyl bromide groups in the backbones containing 4-MeSt units could be generated by bromination of the methyl groups using N-bromosuccinimide/benzoyl peroxide. The structures of the prepared polymers were well-controlled, as evidenced by the controlled molecular weight as well as the narrow and unimodal molecular weight distribution
Novel Silicon-containing Polynorbornenes as Photoresists for Extreme Ultraviolet Lithography
곽영제,Kwark, Young-Je The Korean Fiber Society 2006 한국섬유공학회지 Vol.43 No.5
Performance requirements for extreme ultraviolet (EUV) resists using photons at $\sim$13 nm may require the development of entirely new polymer platforms. Elements that are commonly used in photoresists at other wavelengths, such as oxygen and fluorine, are highly absorbing in this region making them problematic for EUV applications. We have devised new polymer platform for EUV lithography (EUVL). We have synthesized silicon-containing norbornene copolymers using ring-opening metathesis polymerization (ROMP). The norbornene monomers were prepared and copolymerized with a series of monomers having acid sensitive and polar groups, including nitrile, carboxylic acid, hydroxyl, and anhydride functions to achieve random copolymers with suitable properties for EUVL. From initial exposure studies using an EUV interferometer, we were able to produce patterns having a 150 nm pitch without additional optimization.