http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
함용수,고중혁 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.41
Three (3)-wt% Li2CO3 doped (Ba0.5,Sr0.5)TiO3 thick films were prepared and sintered at a relatively low temperature (900 ℃) for electronic device applications. The thick films were prepared via a screen printing process on Ag-Pd printed alumina substrates. In this experiment, the crystalline and the electrical properties of Li2CO3-doped (Ba0.5,Sr0.5)TiO3 thick films on the Ag-Pd printed alumina substrates sintered at 900 ℃ were investigated. To investigate the electrical properties,we employed impedance spectroscopy and ac conductivity. In this study, we found that the 3-wt%Li2CO3 doped (Ba0.5,Sr0.5)TiO3 thick film exhibited perovskite and pseudo-cubic structures. Also,the relative dielectric permittivity of the 3 wt% Li2CO3 doped (Ba0.5,Sr0.5)TiO3 thick film was 149.25 at 30 ℃, and the activation energies were 0.432 and 0.326 eV at 1 and 81.57 kHz, respectively. The resistances of the grain and the grain boundary were 17.65 kΩand 40.5 kΩat 130 ℃,respectively.
Ag가 첨가된 0.9(Na0.52K0.48)NbO3-0.1LiTaO3 세라믹스
이경수,고중혁 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.7
Lead-free 0.9(Na0.52K0.48)NbO3 - 0.1LiTaO3 piezoelectric ceramics doped with Ag2O (0-4 mol%) have been prepared by the conventional mixed oxide method. The structural and electrical properties were analyzed in order to find its potential applications. The crystal structure of 1-4 mol% Ag doped 0.9(Na0.52K0.48)NbO3-0.1LiTaO3 lead free piezoelectric ceramics were investigated for several sintering temperatures (1100oC) by the use of X-ray diffraction analysis. In order to analyze the effect of Ag dopants on the 0.9(Na0.52K0.48)NbO3-0.1LiTaO3 ceramic, the diffraction intensity ratio of the (002) to (200) planes were calculated from the X-ray diffraction patterns of the ceramic samples.
신동진,고중혁 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.6
As a candidate for lead free piezoelectric material, Ag doped 0.95(Na<SUB>0.52</SUB>K<SUB>0.48</SUB>)NbO<SUB>3</SUB>-0.05LiTaO<SUB>3</SUB> ceramics were prepared by using the conventional mixed oxide method. Ag doped 0.95(Na<SUB>0.52</SUB>K<SUB>0.48</SUB>)NbO<SUB>3</SUB>-0.05LiTaO<SUB>3</SUB> ceramics were investigated to know the influence of calcination temperature. The crystal structures of Ag doped 0.95(Na<SUB>0.52</SUB>K<SUB>0.48</SUB>)NbO<SUB>3</SUB>-0.05LiTaO<SUB>3</SUB> lead free piezoelectric ceramics were examined by varying the calcination temperatures from 750 to 850 ℃ by employing the X-ray diffraction analysis and scanning electron microscopy measurement. The effects of calcination temperatures on the microstructure, piezoelectric and ferroelectric properties were systematically investigated. The dielectric and electrical properties of Ag doped 0.95(Na<SUB>0.52</SUB>K<SUB>0.48</SUB>)NbO<SUB>3</SUB>-0.05LiTaO<SUB>3</SUB> ceramics were measured from 1 kHz to 1 MHz with the various calcination temperatures. we expect that optimized calcination condition can improve the piezoelectric and ferroelectric properties of Ag doped 0.95(Na<SUB>0.52</SUB>K<SUB>0.48</SUB>)NbO<SUB>3</SUB>-0.05LiTaO<SUB>3</SUB> ceramics.
문상호,고중혁,김세호 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.41
The dielectric and the electrical properties of ZnBO-doped (Ba,Sr)TiO3 thick films on alumina substrates were investigated. 1-, 3-, and 5-wt% ZnBO doped BST thick films were prepared by using the screen printing method on the alumina substrates, which were sintered at 1200 ℃. The frequency-and temperature-dependent dielectric properties were investigated. Current-voltage characteristics were investigated in the temperature range from 303 to 373 K with different doping contents (1-, 3-, and 5-wt% ZnBO-doped BST). The temperature-dependent resistivity was calculated. The leakage current density of the 5-wt% ZnBO-doped BST thick film was only 35 pA /cm2at an applied electric field of 4 kV/cm, while those at the 1- and 3-wt% ZnBO-doped BST thick films were 59 and 44 pA/cm2, respectively. From the temperature-dependent current - voltage characteristics, we confirmed that ZnBO-doped BST thick films show and negative temperature coefficients of resistivity (NTCR).