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초정밀 나노구조물 형성을 위한 새로운 KOH 습식각 기술
강찬민,박정호,Kang, Chan-Min,Park, Jung-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.2
The present study introduces a novel wet etching technique for nanostructure fabrications which usually requires low surface roughness. Using the current method, acquired profiles were smooth even in the nanoscale, which cannot be easily achieved with conventional wet or dry etching methods. As one of the most popular single crystal silicon etchant, potassium hydroxide (KOH) solution was used as a base solvent and two additives, antimony trioxide (Sb2O3) and ethyl alcohol were employed in. Four experimental parameters, concentrations of KOH, Sb2O3, and ethyl alcohol and temperature were optimized at 60 wt.%, 0.003 wt.%, 10 v/v%, and $23^{\circ}C$, respectively. Effects of additives in KOH solution were investigated on the profiles in both (110) and (111) planes of single crystal silicon wafer. The preliminary results show that additives play a critical role to decrease etch rate significantly down to ~2 nm/min resulting in smooth side wall profiles on (111) plane and enhanced surface roughness.
고밀도 플라즈마를 이용한 ZnO 박막의 식각 특성 분석
강찬민(Chan-Min Kang),김관하(Gwan-Ha Kim),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
ZnO 박막은 wide band gap(Eg=3.37eV)의 derect band gap을 갖고 있기 때문에 여러 소자로의 응용가능성에 큰 기대를 하고 있는 물질이다. 본 논문에서는 소자 제조과정에서 요구되는 ZnO 박막의 식각변수에 따른 식각율과 식각특성에 관하여 연구하였으며 Inductively coupled plasma(ICP)를 사용하여 BCl₃/Ar 가스를 혼합하여 식각을 하였다. BCl₃/Ar=8/2 플라즈마에서 화학적 식각의 도움을 받아 ZnO 박막의 식각률은 1724λ/min로 최고를 보였으며 이때의 공정 조건은 800W의 RF power, 400 W 의 bias power, 1 Pa 의 공정 압력이었다. 식각시에 플라즈마 내부의 이온 거동상태를 측정하기위해 quadrupole mass spectrometer(QMS)를 사용하여 분석하였고 식각후 ZnO 박막의 식각률은 surface profiler(KLA Tencor, α-step 500)을 이용하여 측정하고 ZnO 박막과 B, Cl 라디칼과의 표면 반응 상태를 고찰하기 위하여 식각된 ZnO 박막의 표면을 X-ray photoelectron Spectroscopy(XPS)로 분석하였다. XPS를 통하여 ZnO 박막과 Cl 라디칼과 반응을 하여 식각된다는 것과 낮은 휘발성으로 인하여 Ar 이온에 의한 스퍼터링 효과의 도움에 의해서 식각이 진행됨을 확인 하였다.
엄두승(Doo-Seung Um),강찬민(Chan-Min Kang),양설(Xue Yang),김동표(Dong-Pyo Kim),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.3
This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from ?50 V to ?200 V, the etch rate of TiN thin film increased from 15 ㎚/min to 452 ㎚/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was BCl₃(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 ㎚), Cl?(481.9 ㎚) and Cl²?(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in BCl₃/Ar ICP plasma.
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막의 식각
金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),禹鍾昌(Jong-Chang Woo),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.2
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ thin film is 85.5 ㎚/min at a BCl₃/(BCl₃+Ar) of 20 % and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O₂ addition of 2 seem into the BCl₃/(BCl₃+Ar) of 20 % plasma.
BCl₃/Ar 유도 결합 플라즈마를 이용한 ZnO 박막의 식각 특성
禹鍾昌(Jong-Chang Woo),金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.3
The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with BCl₃/Ar gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to SiO₂ as a function of BCl₃/Ar gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 ㎚/min was obtained for BCl₃ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막 식각
김관하(Gwan-Ha Kim),김경태(Kyoung-Tae Kim),김종규(Jong-Kyu Kim),우종창(Jong-Chang Woo),강찬민(Chan Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by Quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ is 85.5 ㎚/min at a BCl₃(BCl₃+Ar) of 20% and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O2 addition of 2 sccm into the BCl₃/(BCl₃+Ar) of 20% plasma.
Dielectric properties of PST (20/80)/ PST(80/20) heterolayered thin films
김경태(Kyoung-Tae Kim),김관하(Gwan-Ha Kim),우종창(Jong-Changb Woo),김종규(Jong-Gyu Kim),강찬민(Chan-Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the Pt/Ti/SiO₂/Si substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 ㎑ were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.