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주철원,이경호,민병규,김성일,이종민,강영일,Ju, Chul-Won,Lee, Kyung-Ho,Min, Byoung-Gue,Kim, Seong-Il,Lee, Jong-Min,Kang, Young-il 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
The plating shape in the opening of photoresist becomes gradated shape in the fountain plating system, because bubbles from the wafer surface are difficult to escape from the deep openings, vias. In this paper, the bubble flow from the wafer surface during plating process was studied and we designed the tilted electrode ring to get uniform bump height on all over the wafer and evaluated the film uniformity by SEM and $\alpha-step$. In a-step measurement, film uniformities in the fountain plating system and the tilted electrode ring contact system were $\pm16.6\%,\;\pm4\%$ respectively.
AlGaN/GaN HEMT 소자 제작에서 게이트 리세스 공정 개선에 의한 소자 DC 특성의 변화
민병규(Byoung-Gue Min),윤형섭(Hyung Sup Yoon),안호균(Ho-Kyun Ahn),김해천(Haecheon Kim),조규준(Kyu-Jun Cho),이종민(Jong-Min Lee),김성일(Seong-Il Kim),강동민(Dong-Min Kang),이상흥(Sang-Heung Lee),주철원(Chul-Won Ju),김동영(Dong-Young K 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
In the fabrication of AlGaN/GaN HEMT on SiC, it is critical to establish a stable process condition of a gate recess. In this study, we etched the AlGaN layer by a low-energy ICP with variations of etch times. In addition, HC1 treatment followed the etch step. The 2-times process of SiN deposition and etch was tried to reduce the gate length by mis-aligned lithography. A proportional relationship between Vth(or Gm) and recess etch depth was identified. There also was a surface-improving effect to reduce the leakage current by HC1 treatment.