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Na Eun Kim(Na Eun Kim),Sung Sik Kim(Sung Sik Kim),Jihei Sara Lee(Jihei Sara Lee ),Kwanghyun Lee(Kwanghyun Lee),Hyoung Won Bae(Hyoung Won Bae),Sang Yeop Lee(Sang Yeop Lee),Wungrak Choi(Wungrak Choi),Ch 대한안과학회 2023 Korean Journal of Ophthalmology Vol.37 No.3
Purpose: To evaluate the effect of intraoperative mitomycin C (MMC) on the surgical outcomes of ciliary sulcus (CS) Ahmed glaucoma valve (AGV) tube placement. Methods: A retrospective review of medical records of 54 consecutive patients who underwent AGV implantation with tube placed in CS was performed. Consecutive cases operated without the use of intraoperative MMC from 2017 to 2019 were compared with consecutive cases operated with MMC from 2019 to 2021. Surgical failure was defined as intraocular pressure (IOP) exceeding 21 mmHg in two consecutive visits after postoperative 3 months or ≤30% IOP reduction, IOP ≤5 mmHg in two consecutive visits, or loss of light perception. Kaplan-Meier survival analysis and log-rank test were performed to compare the surgical failure rates. Results: A total of 54 eyes of 54 patients were investigated. Mean follow-up period after AGV implantation was 1.4 ± 0.8 years. The MMC group showed significantly lower IOP during the 1st postoperative month (20.5 ± 8.6 mmHg vs. 15.8 ± 6.4 mmHg, p = 0.027), but the difference did not persist 6 months after the surgery (p = 0.805). The mean number of postoperative antiglaucoma medications was significantly lower in the MMC group in the 1st postoperative month (p = 0.047) but no difference was found at 6 months. No statistical difference was noted in the rates of postoperative complications. Kaplan- Meier survival analysis showed comparable survival rates between MMC group and no MMC group (p = 0.356). Conclusions: The intraoperative use of MMC significantly lowered IOP in the 1st postoperative month but did not increase 6 months success rates in patients receiving AGV tube placement in CS.
Transmission Through an Annular Aperture Surrounded With Corrugations in a PEC Plane
Dong Yeop Na,Kyung-Young Jung,Yong Bae Park IEEE 2015 IEEE antennas and wireless propagation letters Vol.14 No.-
<P>Electromagnetic transmission through an annular aperture surrounded with corrugations in a PEC plane is investigated based on the mode-matching method. The eigenfunction expansion and Hankel transform are utilized to represent the scattered field in the discrete and continuous modes. We demonstrate that a new type of extraordinary electromagnetic transmission can occur due to the strong excitation of TM11 mode even if the corrugation is wide, as well as finding the optimal dimensions based on the three-dimensional parametric study.</P>
나준엽 ( Na Joon Yeop ),이정재 ( Lee Jeong Jae ) 한국농공학회 1998 한국농공학회 학술대회초록집 Vol.1998 No.-
The strength design actually carries an inconsistency where the structural analysis is being viewed in terms of elastic while the design is being drawn up in terms of plastic. In this study, in order to extend the applicability of the strength design, MRFEA(Moment Redistribution Finite Element Analysis) is developed. After carrying out the application example, it is found the use of materials was reduced compared to the elastic analysis.
나준엽 ( Na Joon Yeop ),김한중 ( Kim Han Joong ),이정재 ( Lee Jeong Jae ) 한국농공학회 1999 한국농공학회 학술대회초록집 Vol.1999 No.-
In practicing the refinement project of agricultural production basys, many researches have been done until now, but they are not reused because management is not easily accomplished. We Analyzed and designed the Components of refinement project by the object-orientation technique, and presented a method of accumulation and management of object's data using relational database. In result, management of new data is easy and reusibility are incresed compared to structural analysis technique.
스위칭 손실을 줄인 1700 V 4H-SiC Double Trench MOSFET 구조
나재엽(Jae-Yeop Na),정항산(Hang-San Jung),김광수(Kwang-Su Kim) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.1
본 논문에서는 CDT(Conventional Double Trench) MOSFET보다 스위칭 시간과 손실이 적은 1700 V EPDT(Extended P+ shielding floating gate Double Trench) MOSFET 구조를 제안하였다. 제안한 EPDT MOSFET 구조는 CDT MOSFET 에서 소스 Trench의 P+ shielding 영역을 늘리고 게이트를 N+와 플로팅 P<SUP>-</SUP> 폴리실리콘 게이트로 나누었다. Sentaurus TCAD 시뮬레이션을 통해 두 구조를 비교한 결과 온 저항은 거의 차이가 없었으나 Crss(게이트-드레인 간 커패시턴스)는 게이트에 0 V 인가 시에는 CDT MOSFET 대비 32.54 % 줄었고 7 V 인가 시에는 65.5 % 감소하였다. 결과적으로 스위칭 시간 및 손실은 각각 45 %, 32.6 % 줄어 스위칭 특성이 크게 개선되었다. In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P<SUP>-</SUP> polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.