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Sunhae Shin,Jang, Esan,Jae Won Jeong,Byung-Gook Park,Kyung Rok Kim Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We propose a novel standard ternary inverter (STI) based on nanoscale CMOS technology for a compact design of multivalued logic. Using the gate bias independent OFF-state mechanisms of junction band-to-band tunneling (BTBT), tristate STI operation has been demonstrated in the conventional binary CMOS inverter by TCAD device and mixed-mode circuit simulation with 32-nm high-κ/metal-gate technology. Through analytical device modeling on BTBT and subthreshold current, static noise margin (SNM), off-leakage variation (OLV), and operation voltage (V<SUB>DD</SUB>) scaling limits of STI have been investigated. The typical SNM is 200 mV and the variability of the intermediate level (ΔV<SUB>OM</SUB>~ 50 mV) from OLV can be allowable into the worst SNM (>100 mV) of STI operation at V<SUB>DD</SUB> = 1 V. Exponentially reduced BTBT off-leakage around minimum V<SUB>DD</SUB> ~ 0.1 V is promising for ultimate low-power application of our STI.</P>
Sunhae Shin,In Man Kang,Kyung Rok Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
We propose a novel negative differential resistance (NDR) device with ultra-high peak-tovalley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10<SUP>4</SUP> at low operation voltage of 0.5 V in a single peak and valley current.
Shin, Sunhae,Kang, In Man,Kim, Kyung Rok The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6
We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.
Shin, Sunhae,Kim, Kyung Rok Institute of Pure and Applied Physics 2016 Japanese Journal of Applied Physics Vol.55 No.4
<P>We propose complement double-peak negative differential resistance (NDR) devices with ultrahigh peak-to-valley current ratio (PVCR) over 10(6) by combining tunnel diode with conventional CMOS and its compact five-state latch circuit by introducing standard ternary inverter (STI). At the 'high'state of STI, n-type NDR device (tunnel diode with nMOS) has 1st NDR characteristics with 1st peak and valley by band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT), whereas p-type NDR device (tunnel diode with pMOS) has second NDR characteristics from the suppression of diode current by off-state MOSFET. The 'intermediate'-state of STI permits double-peak NDR device to operate five-state latch with only four transistors, which has 33% area reduction compared with that of binary inverter and 57% bit-density reduction compared with binary latch. (C) 2016 The Japan Society of Applied Physics</P>
Musculoskeletal diseases of heavy industrial workers
( Hyunjin Baek ),( Sunhae Song ),( Donggeon Lee ),( Seunghyeon Pyo ),( Doochul Shin ),( Gyuchang Lee ) 물리치료재활과학회 2017 Physical therapy rehabilitation science Vol.6 No.2
Objective: The purpose of this study was to investigate the musculoskeletal diseases (MSDs) that occur in heavy industrial workers according to the occupational category, prevalence, environment, and number of physical therapy visits. Design: Retrospective cohort study. Methods: For this study, data was collected of workers who were engaged in heavy industry in Korea and who visited the company physicians and received physical therapy in 2016. Data was collected from 855 subjects and was analyzed. With the data collected, analysis of the type and prevalence of MSDs and the number of physical therapy visits that have occurred according to the occupational category and environment was performed. Results: The most common MSDs were lumbar sprains and spasms (31.1%), and shoulder sprain and spasm (19.4%). In addition, the most common type of MSDs according to the occupational category and environment (occupational type) were lumbar sprain and spasms in 11 occupations, including white collar workers, and in milling, inspection, crane operation, and finishing jobs, shoulder muscle sprain and strain were the most common disorders. Also, the prevalence of MSDs according to occupational category and environment (occupational type) was the highest in workers involved with welding, which was 29.7%. Conclusions: Through this study, the type and prevalence of MSDs according to the occupational category and environment of heavy industrial workers have been confirmed. Further studies are necessary to study the future types of the work patterns of industrial workers and to develop a system for preventing and managing MSDs that may occur.
Esan Jang,Sunhae Shin,Jae Won Jeong,Kyung Rok Kim 대한전자공학회 2018 Journal of semiconductor technology and science Vol.18 No.3
We propose a novel optimized design strategy by considering the correlated effects of highk gate oxide and spacer dielectric on GIDL and DIBL for high performance nanoscale CMOS with III-V/Ge channel tri-gate FinFET structure. By investigating the transition of GIDL mechanism from vertical to lateral direction in 14-nm InAs n-FinFET and Ge p-FinFET with abrupt and high drain doping, the lateral GIDL is suppressed as 1/100 by high-k spacer with high drive current of 1 mA/um and lower leakage current than 100 nA/um which works on lower operation voltage (VDD= 0.63 V). in addition, DIBL is also suppressed below 100 mV/V by taking relatively lower-k gate oxide than the high-k spacer.