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Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
Choi, Jun Hee,Zoulkarneev, Andrei,Kim, Sun Il,Baik, Chan Wook,Yang, Min Ho,Park, Sung Soo,Suh, Hwansoo,Kim, Un Jeong,Bin Son, Hyung,Lee, Jae Soong,Kim, Miyoung,Kim, Jong Min,Kim, Kinam Springer Science and Business Media LLC 2011 Nature photonics Vol.5 No.12
Aligned Circular-Type Nanowire Transistors Grown on Multilayer Graphene Film
Kim, Hwansoo,Choi, Hongkyw,Choi, Sung-Yool,Ju, Sanghyun American Chemical Society 2011 The Journal of Physical Chemistry Part C Vol.115 No.45
<P>High-performance transistors using semiconducting nanowires are very promising devices for flexible or transparent electronic applications. However, nanowire-based transistors inevitably have placement and alignment issues, which make them troublesome for real-world applications and can be limiting factors in novel applications. Here we present a novel device structure that can be easily adapted for producing high-yield nanowire transistors. We fabricated fully transparent circular tin oxide (SnO<SUB>2</SUB>) nanowire transistors employing multilayer graphene films (MGFs) as a seed electrode and aligned nanowires as a semiconductor channel. The nanowires were grown directly on MGFs without metal catalysts through a vapor–solid (VS) mechanism. On the basis of these properties, aligned SnO<SUB>2</SUB> nanowires were grown only on the exposed MGF using patterned MGF/SiO<SUB>2</SUB> structures. Regardless of the growth direction of the nanowires centered on the MGF, the as-grown nanowires can play the role of transistor channels because of the circular shape of the gate and the source-drain electrodes. Consequently, the yield rate of circular nanowire transistor structure was around two times as high as that of existing linear nanowire transistor structure.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-45/jp2052008/production/images/medium/jp-2011-052008_0005.gif'></P>
( Kim Hwansoo ) 서울대학교 규장각한국학연구원 2013 Seoul journal of Korean studies Vol.26 No.2
This article examines the history of the villages of lay monks (chaegasŭng) near North Korea’s northernmost border. These communities had been ignored for centuries until they suddenly became the object of scholarly and public attention when Korea fell under Japanese colonial rule (1910-1945). The men of the villages were called “lay monks.” They shaved their heads, had wives and children, and had more than one ethnic identity. Despite the sizable number of lay monk villages in this region, their long history and, more importantly, their monastic identity and Buddhist lifestyle, narratives about these communities are almost absent in the historiography of Korean Buddhism. The absence of a written history is ascribed to that historiography’s privileged focus on the influential figures, doctrines, texts, and schools that contributed to the protection of the state. Colonial experiences and national divisions have reinforced these elite- and nationcentered narratives about Korean Buddhism to the exclusion of its more pluralistic, local dimensions on the periphery. If the history of these lay monk communities is understood within the context of Chosŏn Buddhism (1392-1910) placed under the Neo-Confucian hegemony of the Chosŏn dynasty, then clearly the existence of these communities is not an anomaly developed independently, but instead is an integral part of Korean Buddhism.
A Buddhist Christmas: The Buddha's Birthday Festival in Colonial Korea (1928-1945)
Hwansoo Kim 서강대학교 종교연구소 2011 Journal of Korean Religions Vol.2 No.2
This article examines the dynamic aspects of the Buddha's Birthday festival as it was celebrated from 1928 to 1945 in colonial Korea. A joint Japanese and Korean Buddhist event sponsored by the state, it became the signature religious and state festival. Although much politicized, the festival was also a culmination of Buddhist efforts in Asia to respond to modernity, nationalism, colonialism, and Christian missions. Paralleling the reinvention of Christmas in the modern period, Buddhists reconfigured the Buddha's birthday as a symbol of their religious identity and power. The Buddha's Birthday festival should be understood in the context of increasing contact and exchange among Buddhists in the East and the West. The festival's prominence was the result of complex negotiation and collaboration between Korean and Japanese Buddhists who both hoped the festival would advance their overlapping visions of Buddhism. The festival was not so much an imposition of the colonizer on a native culture as it was a dynamic, creative feature of modern Korean Buddhism in the colonial context.
Direct growth of oxide nanowires on CuO<sub>x</sub> thin film
Kim, Hwansoo,Kook Lee, Byung,An, Ki-Seok,Ju, Sanghyun IOP Pub 2012 Nanotechnology Vol.23 No.4
<P>Oxide nanowires were directly grown on a CuO<SUB>x</SUB> thin film deposited by plasma-enhanced atomic layer deposition without additional metal catalysts. Oxide nanowires would exhibit metal–catalyst-free growth on the CuO<SUB>x</SUB> thin film with oxide materials diffused on the top. Through a focused ion beam and transmission electron microscopy, we could verify that SnO<SUB>2</SUB> and ZnO nanowires were grown as single-crystalline structures just above the CuO<SUB>x</SUB> thin film. Bottom-gate structural SnO<SUB>2</SUB> and ZnO nanowire transistors exhibited mobilities of 135.2 and 237.6 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>, respectively. We anticipate that a variety of large-area and high-density oxide nanowires can be grown at low cost by using the CuO<SUB>x</SUB> thin film.</P>
Nanowire Transistor Behavior Under AC Drives
Hwansoo Kim,Pyong-Su Kwag,Sumi Lee,Oh-Kyong Kwon,Sanghyun Ju IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.6
<P>Reliable nanowire transistors (NWTs) under ac drives are required for applications such as display pixels and driving circuits. In this study, the transistor characteristics of SnO<SUB>2</SUB> NWTs by ac stress and the effects of passivation were examined to investigate the device reliability under ac drives. Under ac stress, the shift in the threshold voltage (V <SUB>th</SUB>) of the devices without passivation was within the range of 2-7 V, whereas the device with passivation showed positive shifts of less than ~1.6 V. The device with passivation also stabilized twice as fast as that without passivation. Heat was generated in the nanowires under ac drives, and accordingly, a passivation layer limited the temperature increase and distributed the carriers more evenly in the nanowires as compared to the nonpassivated case. These mechanisms enable the transistor characteristics to remain stable under ac drives. The stabilization was verified by simulating with a V<SUB>th</SUB> model equation for metal oxide semiconductor devices and by including the temperature as a variable. The results show that NWTs with passivation exhibited stable transistor characteristics under repetitive ac stress for long durations. This research suggests improvement measures for fabricating nanowire circuits that are reliable under ac drives.</P>
Kim, Seongmin,Kim, Hwansoo,Janes, David B,Ju, Sanghyun IOP Pub 2013 Nanotechnology Vol.24 No.30
<P>Due to the large surface-to-volume ratio of nanowires, the quality of nanowire–insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current–voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N<SUB>2</SUB> plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ∼1.20 × 10<SUP>−2</SUP>. Upon N<SUB>2</SUB> plasma treatment with N<SUB>2</SUB> gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ∼4.99 × 10<SUP>−3</SUP> (8.14 × 10<SUP>−3</SUP>). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N<SUB>2</SUB> plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.</P>
Metallic, Linear, and Saturated Output Characteristics of Oxide Nanowire Transistors
Hwansoo Kim,Pyong-Su Kwag,Sumi Lee,Oh-Kyong Kwon,Sanghyun Ju IEEE 2012 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.11 No.2
<P>Ideal nanowire transistors exhibit saturation and square-law behavior in their output characteristics. The current saturation above the pinch-off voltage is an essential characteristic for transistors to be applied to a display device that is required to produce a consistent level of brightness even during long operation periods. However, fabricated oxide nanowire transistors exhibit three representative output characteristics-metallic, linearly increasing, and saturated curves-within a measurable range. In this study, through experiments and simulations using In <SUB>2</SUB>O<SUB>3</SUB> nanowire transistors, we show that fewer oxygen vacancies in the nanowire produce output characteristics more similar to ideal MOSFET characteristics. This result indicates that differences in electrical characteristics of the nanowire transistor are derived from the difference in the number of oxygen vacancies in the oxide nanowire.</P>