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Jae-Woo Park,Dongyun Lee,Hakyoung Kwon,Seunghyup Yoo,Jongmoo Huh IEEE 2009 IEEE electron device letters Vol.30 No.7
<P>We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiO<SUB>x</SUB> active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiO<SUB>x</SUB> films exhibited the saturation mobility (mu<SUB>sat</SUB>) as high as 3.2 cm<SUP>2</SUP>/V ldr s but suffered from the low on-off ratio (I<SUB>ON</SUB>/I<SUB>OFF</SUB>) of 2.0 times 10<SUP>2</SUP> ldr N<SUB>2</SUB>O plasma treatment was then attempted to improve I<SUB>ON</SUB>/I<SUB>OFF</SUB>. Upon treatment, the TiO<SUB>x</SUB> TFTs exhibited I<SUB>ON</SUB>/I<SUB>OFF</SUB> of 4.7 times 10<SUP>5</SUP> and mu<SUB>sat</SUB> of 1.64 cm<SUP>2</SUP>/V ldr s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.</P>