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Controlling the Threshold Voltage of Organic Thin-Film Transistors by Transition Metal Oxides
Hanul Moon,Dongmo Im,Seunghyup Yoo IEEE 2013 IEEE electron device letters Vol.34 No.8
<P>We demonstrate an effective, noble metal-free method to control the threshold voltages (VT) of organic thin-film transistors (OTFTs). Through covering an Al gate electrode with a high work function (WF) transition metal oxide (TMO) layer of WO<SUB>3</SUB> or MoO<SUB>3</SUB>, VT is shifted in a positive direction from -2.15 V to -1.40 V or -0.89 V, respectively, with respect to that of OTFTs with a bare Al gate electrode. Together with a thin dielectric layer of cross-linked Cytop, the reduced magnitude of V<SUB>T</SUB> allows for a low-voltage switching operation with a gate voltage as small as 2 V. The amount of V<SUB>T</SUB> shift is shown to correlate well with the change in the WF of the gate electrode upon TMO deposition.</P>