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Catalytic CVD 저온공정으로 제조된 나노급 니켈실리사이드의 물성
최용윤 ( Yong Yoon Choi ),김건일 ( Kun Il Kim ),박종성 ( Jong Sung Park ),송오성 ( Oh Sung Song ) 대한금속·재료학회 2010 대한금속·재료학회지 Vol.48 No.2
10 nm thick Ni layers were deposited on 200 nm SiO2/Si substrates using an e-beam evaporator. Then, 60 nm or 20 nm thick α-Si:H layers were grown at low temperature (<200℃) by a Catalytic-CVD. NiSi layers were already formed instantaneously during Cat-CVD process regardless of the thickness of the α-Si. The resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness with the additional rapid thermal annealing up to 500℃ were examined using a four point probe, HRXRD, FE-SEM, TEM, AES, and SPM, respectively. The sheet resistance of the NiSi layer was 12Ω/□ regardless of the thickness of the α-Si and kept stable even after the additional annealing process. The thickness of the NiSi layer was 30 nm with excellent uniformity and the surface roughness was maintained under 2 nm after the annealing. Accordingly, our result implies that the low temperature Cat-CVD process with proposed films stack sequence may have more advantages than the conventional CVD process for nano scale NiSi applications.
폴리이미드 기판에 극저온 Catalytic-CVD로 제조된 니켈실리사이드와 실리콘 나노박막
송오성 ( Oh Sung Song ),최용윤 ( Yong Yoon Choi ),한정조 ( Jung Jo Han ),김건일 ( Gun Il Kim ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.4
The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (α-Si:H) process of Ts=180℃ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of <13Ω/□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.
저온 ICP-CVD 공정으로 제조된 나노급 실리콘 박막의 물성
신운 ( Yun Shen ),심갑섭 ( Gap Seop Sim ),최용윤 ( Yong Yoon Choi ),송오성 ( Oh Sung Song ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.4
100 nm-thick hydrogenated amorphous silicon (α-Si:H) films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to 550℃. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >400℃. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above 400℃ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at 550℃ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.
유리기판에CatalyticCVD저온공정으로제조된나노급니켈실리사이드와결정질실리콘
송오성 ( Oh Sung Song ),김건일 ( Kun Il Kim ),최용윤 ( Yong Yoon Choi ) 대한금속재료학회 ( 구 대한금속학회 ) 2010 대한금속·재료학회지 Vol.48 No.7
30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm α-Si:H layers were grown at low temperatures (<220℃) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the α-Si:H layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of 10Ω/□. The crystallinty of the α-Si:H layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.