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직접접합 실리콘/실리콘질화막//실리콘산화막/실리콘 기판쌍의 선형가열에 의한 보이드 결함 제거
정영순,송오성,김득중,주영철,Jung Youngsoon,Song Ohsung,Kim Dugjoong,Joo Youngcheol 한국재료학회 2004 한국재료학회지 Vol.14 No.5
The void evolution in direct bonding process of $Si/Si_3$$N_4$ ∥ $SiO_2$/Si silicon wafer pairs has been investigated with an infrared camera. The voids that formed in the premating process grew in the conventional furnace annealing process at a temperature of $600^{\circ}C$. The voids are never shrunken even with the additional annealing process at the higher temperatures. We observed that the voids became smaller and disappeared with sequential scanning by our newly proposed fast linear annealing(FLA). FLA irradiates the focused line-shape halogen light on the surface while wafer moves from one edge to the other. We also propose the void shrinking mechanism in FLA with the finite differential method (FDM). Our results imply that we may eliminate the voids and enhance the yield for the direct bonding of wafer pairs by employing FLA.
코발트/니켈 복합실리사이드의 실리사이드온도에 따른 면저항과 미세구조 변화
정영순,정성희,송오성,Jung Young-soon,Cheong Seong-hwee,Song Oh-sung 한국재료학회 2004 한국재료학회지 Vol.14 No.6
The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 50 nm-thick and, the same time, the silicides also need to have low contact resistance without agglomeration at high processing temperatures. We fabricated Si(100)/15 nm-Ni/15 nm-Co samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from $700^{\circ}C$ to $1100^{\circ}C$ using rapid thermal annealing. We investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. Sheet resistance of the annealed sample stack was measured with a four point probe. The sheet resistance measurements for our proposed Co/Ni composite silicide was below 8 $\Omega$/sq. even after annealing $1100^{\circ}C$, while conventional nickel-monosilicide showed abrupt phase transformation at $700^{\circ}C$. Microstructure and auger depth profiling showed that the silicides in our sample consisted of intermixed phases of $CoNiSi_{x}$ and NiSi. It was noticed that NiSi grew rapidly at the silicon interface with increasing annealing temperature without transforming into $NiSi_2$. Our results imply that Co/Ni composite silicide should have excellent high temperature stability even in post-silicidation processes.
정영순,최귀순,Jeong, Yeong-Sun,Choe, Gwi-Sun 대한간호협회 1995 대한간호 Vol.34 No.2
This study was done to identify burnout factors and coping methods surveyed upon 59 out-patients who have continuous peritoneal dialysis. Raw data was collected after being filled the questionnaire by subjects or directly interviewing at the peritoneal dialysis room of the K hospital. Taegu. Then. data was classified and analyzed according to categories of questions and revealed facts. The following results are obtained: The average age of subjects is 43.8 years old and the average duration of continuous peritoneal dialysis is 16.9 months. The reasons of choosing continuous peritoneal dialysis are 61. 0% by recommendation of doctor and nurse ranked as the first, 32. 2% by patient own decision ranked as the second. The 57.6% of subjects were experienced complications related to continuous peritoneal dialysis. The major psychosocial burnout factors because of the dialysis are confinement, wasting time, change in responsibility and role as a member of family, worriment for infection, interference in job: and the major physiological burnout factors are fatigue and weakness. Among the main coping methods, the problem-oriented coping methods are "accept the given situation itself, "actively try to change the situation", "try to maintain some controls over the situation", and the affective-oriented coping method are "give up and accept as fate", "pray", "ask comfort or help from family and friends", "sleep", "cry". Conclusively, it can be said that effective nursing intervention is needed to prevent continuous peritoneal dialysis burnout.