고주파 마그네트론 스퍼터링 방법으로 증착한 PDP용 ${Mg_{1-x}}{Zn_x}$O 보호막의 전기광학적 특성연구

정은영,이상걸,이도경,이교중,손상호,Jeong, Eun-Yeong,Lee, Sang-Geol,Lee, Do-Gyeong,Lee, Gyo-Jung,Son, Sang-Ho 한국재료학회 2001 한국재료학회지 Vol.11 No.3

교류구동형 플라즈마 표시소자의 보호막으로 사용되는 MgO의 특성향상을 위하여 기존의 MgO에 양이온이 등전적으로 치환될 수 있는 ZnO를 소량 첨가하여 고주파 마그네트론 스퍼터링 방법으로 $Mg_{1-x}$Z $n_{x}$O박막을 성장시키고 박막의 전기적, 광학적 특성을 조사하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 테스트 판넬을 제작하고 ZnO의 첨가가 소자의 방전전압과 메모리 이득에 미치는 영향을 살펴보았다. ZnO농도가 0at%, 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막의 광투과율은 ZnO 첨가에 따라 변화를 보이지 않으나 유전상수는 다소 증가하는 경향을 보였다. ZnO의 농도가 0.5 at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 PDP 소자의 방전개시전압과 방전유지 전압이 MgO 박막을 보호막으로 갖는 소자에 비해 20V까지 낮아졌고, 결과적으로 메모리계수는 다소 증가하였다. ZnO농도가 0.5 at%, 1at%인 $Mg_{1-x}$Z $n_{x}$O 박막을 보호막으로 갖는 소자에서 ZHO의 첨가에 비례하여 방전세기 (플라즈마 밀도)가 증가하였다.도)가 증가하였다.도)가 증가하였다. M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

Two-Dimensional Phosphorene-Derived Protective Layers on a Lithium Metal Anode for Lithium-Oxygen Batteries

Kim, Youngjin,Koo, Dongho,Ha, Seongmin,Jung, Sung Chul,Yim, Taeeun,Kim, Hanseul,Oh, Seung Kyo,Kim, Dong-Min,Choi, Aram,Kang, Yongku,Ryu, Kyoung Han,Jang, Minchul,Han, Young-Kyu,Oh, Seung M.,Lee, Kyu T American Chemical Society 2018 ACS NANO Vol.12 No.5

<P>Lithium-oxygen (Li-O<SUB>2</SUB>) batteries are desirable for electric vehicles because of their high energy density. Li dendrite growth and severe electrolyte decomposition on Li metal are, however, challenging issues for the practical application of these batteries. In this connection, an electrochemically active two-dimensional phosphorene-derived lithium phosphide is introduced as a Li metal protective layer, where the nanosized protective layer on Li metal suppresses electrolyte decomposition and Li dendrite growth. This suppression is attributed to thermodynamic properties of the electrochemically active lithium phosphide protective layer. The electrolyte decomposition is suppressed on the protective layer because the redox potential of lithium phosphide layer is higher than that of electrolyte decomposition. Li plating is thermodynamically unfavorable on lithium phosphide layers, which hinders Li dendrite growth during cycling. As a result, the nanosized lithium phosphide protective layer improves the cycle performance of Li symmetric cells and Li-O<SUB>2</SUB> batteries with various electrolytes including lithium bis(trifluoromethanesulfonyl)imide in <I>N,N</I>-dimethylacetamide. A variety of <I>ex situ</I> analyses and theoretical calculations support these behaviors of the phosphorene-derived lithium phosphide protective layer.</P> [FIG OMISSION]</BR>

Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정

정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4

MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.

오존층보호에 관한 국제법적 고찰

이현조(Hyun-Jo Lee) 대한국제법학회 2003 國際法學會論叢 Vol.48 No.3

지구의 방패라 할 수 있는 성층권 오존층은 생물학적 피해를 끼치는 태양자외선복사(UV-B)로부터 지구생태계와 인류를 보호하고 있다. 몬트리올의정서체제의 핵심은 심각한 상태에 있는 오존층을 보호하기 위한 골격조약인 1985년 비엔나협약과 오존층 파괴물질을 구체적으로 규제하기 위한 1987년 몬트리올의정서(원의정서), 4개의 개정의정서 및 5개의 조정의정서이다. 이러한 몬트리올 개정ㆍ조정의정서들은 원의정서에 규제물질로 규정된 주요 오존파괴물질인 염화불화탄소와 활론류의 생산량 및 소비량의 감축일정을 대폭 앞당기고 있을 뿐만 아니라 새로운 오존파괴물질로 과학적으로 인정된 수소화불화탄소, 메틸브로마이드 및 브로로클로메탄 등에 대한 규제조치를 규정하고 있다. 몬트리올의정서의 규제조치 채택방식에는 개정안과 조정안이 있다. 먼저 개정안은 당사국의 비준을 필요로 하며 개정안의 대상은 오존파괴물질의 의정서 부속서에의 추가 또는 삭제 그리고 새로운 규제물질에 적용되는 규제조치의 체계, 범위 및 시기이다. 이에 반해 조정안은 당사국의 비준절차를 생략한 일종의 약식개정절차이다. 조정안의 대상은 오존파괴지수의 변경, 기존 규제물질의 생산량과 소비량의 추가 조정, 감축조치와 감축일정의 변경이다. 의정서 규제조치에 대한 조정안은 매년 개최되는 당사국회의에서 당사국들의 결정형식으로 채택된다. 조정방식은 기본협약-의정서방식의 최대약점으로 지적되어 온 국내비준절차의 지연문제를 해결함으로써 오존층의 신속한 보호라는 몬트리올의정서의 목적에 기여하고 있다. 한편, 몬트리올의정서의 가입을 장려하고 의정서의 규제조치의 실효성을 확보하기 위한 제도로서 의정서 제4조의 비당사국에 대한 무역규제조치를 들 수 있다. 이 조항이 최혜국대우와 내국민대우와 같은 비차별원칙을 규정하고 있는 1994년 GATT 규정과 양립되는가가 문제된다. 의정서 제4조에 따른 비당사국에 대한 무역규제조치는 당사국이 비차별원칙이 적용되지 않는 예외조항인 GATT 제20조 (b)항에 규정된 인간과 동식물의 생명 및 건강의 보호를 위해 비당사국에 대해 수입금지조치를 취하는 한 GATT 규정과 양립된다고 본다. 몬트리올의정서체제는 산업발달로 인해 진행되어 온 오존층파괴의 심각성에 관한 과학계의 증거제시 및 국제적 인정에 따라 신속하게 조정ㆍ개정되어 시행되고 있다. 몬트리올의정서체제는 염화불화탄소(CFCs) 등 오존층 파괴물질을 실질적으로 감소시키고 있다는 과학계의 평가를 받고 있다. 이에 따라 대부분의 국제환경법 학자들도 오존층보호에 관한 몬트리올의정서체제가 국제환경조약 중 성공적인 조약으로 인정하고 있다. The ozone layer, which exists in the stratosphere above the earth, is a concentration or layer of ozone molecule. The primary function of the ozone layer is to absorb incoming ultraviolet radiation with biological effects(UV-B) from the sun, thus protecting the earth. Therefore the protection of the ozone layer is essential for human health and environment. According to scientific research the ozone layer is destroyed by certain chemical compounds, namely, ozone depleting substances(ODSs), such as chloroflorocarbons(CFCs) and halons, etcs. The Montreal Protocol Regime is international law for the protection of the ozone layer. The Regime consists of the 1985 Vienna convention for the Protection of the Ozone Layer, the 1987 Montreal Protocol on Substances that Deplete the Ozone Layer, the 1990 London Adjustments and Amendments to the Montreal Protocol, the 1992 Copenhagen Adjustments and Amendments to the Montreal Protocol, the 1995 Vienna Adjustments to the Montreal Protocol, 1997 Montreal Adjustments and Amendments to the Montreal Protocol and 1999 Beijing Adjustments and Amendments to the Montreal Protocol. There are amendments and adjustments in the adoption method of the Montreal Protocol's controlled measures. First of all, the amendments need ratification of states parties. The amendments are also need in the following cases: when ozones depletion substances are added or deleted in the protocol appendix; when the systems, category, and period of controlled measures applied to the newly controlled substances are decided. But the adjustments are simplified revision procedure without states parties' ratification. The objects of adjustments are alteration of ozone depletion substances, additional adjustments of existing controlled substances of production and consumption, and alteration of reduction measures and reduction schedule. The adjustments method, by resolving the delay of domestic ratification procedures which was the weakest point of framework convention-protocol method, reserves the aim of Montreal Protocol. In addition, the Montreal Protocol provides for the control of trade in controlled substances with non-parties in order to encourage admission of the Montreal Protocol Regime and to obtain the effectiveness of controlled measures. It is necessary to determine whether this trade provision in the Protocol is consistent with GATT obligations of non discrimination principle as most favored nation(MFN) treatment and national treatment. This trade provision in the Protocol appears to qualify for the exception under Article XX(b) of GATT because of the demonstrated threat to human, animal and plant life and health from depletion of the ozone layer. In conclusion, the Montreal Protocol Regime is evaluated to reduce ozone depletion substances by scholars in science field. Accordingly, most scholars in international environmental law recognize the Montreal Protocol Regime for the Protection of Ozone Layer as the most successful of international environmental treaty.

The Effect of Spacer on Microclimate and Comfort Sensation in Protective Clothing for Firefighters

Chung, Gi-Soo,Lee, Dae Hoon 한국의류산업학회 2002 한국의류산업학회지 Vol.4 No.6

Protective clothing for firefighters typically consists of a flame resistant outer shell and inner layers. The inner layers are generally composed of a moisture barrier and a thermal barrier. On performing the task in fire place the heat and perspiration generated from the body become trapped inside the protective clothing. Those heat and moisture result into heat-stress and physical fatigue of firefighter, which hinder the work. Therefore, the system of clothing designs and material layers must be chosen carefully to balance protection and comfort. 3 kinds of protective clothing of 3 layer structure were used in the experiment of physiological comfort. From the comparison of wear trials with the 3 kinds of layers in firefighters clothing, it indicates that the moisture dissipation of A+B2+C was highest, following A+B1+C and A+B3+C. And the heat dissipation of A+B1+C and A+B2+C were better than A+B3+C. In the protective clothing with A+B3+C, heat and perspiration generated through exercise remained in clothing system long and caused discomfort.

Gd₂O₃ 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적.전기적 특성

김창일,임은경,박용준,이영진,백종후,최은하,정석,김정석,Kim, Chang-Il,Lim, Eun-Kyeong,Park, Young-Jun,Lee, Young-Jin,Paik, Jong-Hoo,Choi, Eun-Ha,Juang, Seok,Kim, Jeong-Seok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

ZrO₂ 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적 전기적 특성

김창일,정영훈,이영진,백종후,최은하,정석,김정석,Kim, Chang-Il,Jung, Young-Hun,Lee, Young-Jin,Paik, Jong-Hoo,Choi, Eun-Ha,Jung, Seok,Kim, Jeong-Seok 한국재료학회 2008 한국재료학회지 Vol.18 No.8

The effects of an addition of $ZrO_2$ on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm $ZrO_2$ protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient ($\gamma$) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of $ZrO_2$. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of $\gamma$, at 0.080, a grain size of $19\;{\mu}m$ and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm $ZrO_2$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

Practical Silicon-Surface-Protection Method using Metal Layer

Kyungsuk Yi,Minsu Park,Seungjoo Kim 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.4

The reversal of a silicon chip to find out its security structure is common and possible at the present time. Thanks to reversing, it is possible to use a probing attack to obtain useful information such as personal information or a cryptographic key. For this reason, security-related blocks such as DES (Data Encryption Standard), AES (Advanced Encryption Standard), and RSA (Rivest Shamir Adleman) engines should be located in the lower layer of the chip to guard against a probing attack; in this regard, the addition of a silicon-surface-protection layer onto the chip surface is a crucial protective measure. But, for manufacturers, the implementation of an additional silicon layer is burdensome, because the addition of just one layer to a chip significantly increases the overall production cost; furthermore, the chip size is increased due to the bulk of the secure logic part and routing area of the silicon protection layer. To resolve this issue, this paper proposes a practical silicon-surface-protection method using a metal layer that increases the security level of the chip while minimizing its size and cost. The proposed method uses a shift register for the alternation and variation of the metal-layer data, and the inter-connection area is removed to minimize the size and cost of the chip in a more extensive manner than related methods.

Practical Silicon-Surface-Protection Method using Metal Layer

Yi, Kyungsuk,Park, Minsu,Kim, Seungjoo The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.4

The reversal of a silicon chip to find out its security structure is common and possible at the present time. Thanks to reversing, it is possible to use a probing attack to obtain useful information such as personal information or a cryptographic key. For this reason, security-related blocks such as DES (Data Encryption Standard), AES (Advanced Encryption Standard), and RSA (Rivest Shamir Adleman) engines should be located in the lower layer of the chip to guard against a probing attack; in this regard, the addition of a silicon-surface-protection layer onto the chip surface is a crucial protective measure. But, for manufacturers, the implementation of an additional silicon layer is burdensome, because the addition of just one layer to a chip significantly increases the overall production cost; furthermore, the chip size is increased due to the bulk of the secure logic part and routing area of the silicon protection layer. To resolve this issue, this paper proposes a practical silicon-surface-protection method using a metal layer that increases the security level of the chip while minimizing its size and cost. The proposed method uses a shift register for the alternation and variation of the metal-layer data, and the inter-connection area is removed to minimize the size and cost of the chip in a more extensive manner than related methods.

Fe₂O₃ 첨가에 따른 AC PDP 보호막용 MgO 박막의 광학적.전기적 특성

김창일,정영훈,이영진,백종후,최은하,정석,김정석,Kim, Chang-II,Jeong, Young-Hun,Lee, Young-Jin,Paik, Jong-Hoo,choi, Eun-Ha,Jung, Seok,Kim, Jeong-Seok 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.9

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.