Si (001) 기판에서 $N_2$처리에 의해 형성된 에피택셜 C49-$TiSi_2$상의 열적 거동과 결정학적 특성에 관한 연구

양준모,이완규,박태수,이태권,김중정,김원,김호정,박주철,이순영,Yang, Jun-Mo,Lee, Wan-Gyu,Park, Tae-Soo,Lee, Tae-Kwon,Kim, Joong-Jung,Kim, Weon,Kim, Ho-Joung,Park, Ju-Chul,Lee, Soun-Young 한국재료학회 2001 한국재료학회지 Vol.11 No.2

$N_2$처리에 의해 Si (001) 기판에 형성된 C49상의 구조를 갖는 에피택셜 $TiSi_2$상의 열적 거동과 결정학적 특성을 X선 회절법 (XRD)과 고분해능 투과전자현미경법 (HRTEM)으로 조사하였다. 에피택결 $C49-TiSi_2$상은 $1000^{\circ}C$ 정도의 고온에서도 안정상인 C54상으로 상변태하지 않고 형태적으로도 고온 특성이 우수하다는 것이 밝혀졌다. HRTEM 결과로부터 에피택결 $TiSi_2$상과 Si 사이의 결정학적 방위관계는 (060) [001]TiSi$_2$//(002) [110]Si임을 알 수 있었고 계면에서의 격자 변형에너지는 misfit 전위의 형성에 의하여 해소되는 것을 확인할 수 있었다. 또한 HRTEM상의 해석과 원자 모델링을 통하여 Si에서 에피택셜 C49-TiSi$_2$상의 형성기구와 C49상의 (020) 면에 존재하는 적층결함을 고찰하였다. The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

N2 가스 분사를 이용한 산화 방지시스템에 의한 초고집적 소자용 TiSi2 박막의 특성 개선

윤태림,안성준 한국산학기술학회 2022 한국산학기술학회논문지 Vol.23 No.7

There has been much attention paid to the study of thin TiSi2 film, which has superior electric characteristics compared with conventional poly-silicon film. In this work, we modified traditional LPCVD equipment to purge the oxygen gas inside the deposition chamber, which results in the preservation of good characteristics of the TiSi2 film and improvement in the structural integrity of ULSI semiconductor devices. The purging of oxygen gas was carried out by flowing N2 gas through a long injector that was introduced in the upper part of the chamber. The TiSi2 gate lines made by our new method showed that we could prevent the oxidation of the TiSi2 film, which also led to the very desirable profile of the gate lines. 반도체 소자들의 집적도가 크게 증가함에 따라 기존의 다결정 실리콘보다 전기적 특성이 더 우수한 TiSi2 박막에 대한 연구가 활발하게 진행되고 있다. 본 연구에서는 기존의 LPCVD 설비를 개조하여 TiSi2 박막과 Si3N4 박막 사이에 산화막이 형성되지 않도록 함으로써 TiSi2 박막의 우수한 전기적 특성을 보존할 뿐 아니라 반도체 소자의 구조적 안정성도 향상되게 하였다. 이를 위해, long injector를 LPCVD 반응로의 윗부분까지 설치하고 여기에 N2 가스를 불어넣어 반응로 내에 존재하는 산소 가스를 밀어내도록 하였다. 새로운 방법으로 형성된 TiSi2 게이트 라인에서는 박막이 산화되지 않음은 물론 게이트 라인들의 단면도 훨씬 더 매끄럽고 직사각형에 가까운 이상적인 모양을 만들 수 있다는 것을 실험을 통해 확인하였다.

Optical Properties and Structure of BaO-TiO2-SiO2 Glass Ceramics

김태호,김용석,정용준,나용훈,Hwan Hong Lim,차명식,류봉기 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.12

Nanocrystallized glasses with the composition of (50-x)BaO-xTiO2-50SiO2 (x=10, 15, 16.7 and 20) have been prepared by heattreatment at Tx (crystallization onset temperature) for 3 h, and their optical properties, photoluminescence (PL), XRD and Raman spectra have been examined. The absorption edges of the glasses were red-shifted and the absorption coefficient increased with an increase of TiO2. The glass subjected to the heat-treatment showed a dense formation of Ba2TiSi2O8 crystals. The XRD and Raman results show that the nanocrystallized glasses formed fresnoite phase up to TiO2 concentrations of 15 mol%. Furthermore, blue luminescence with a peak at the wavelength of around 470 nm was observed in the nanocrystallized glass, demonstrating the optical multifunctional nanocrystallized material such as non-linear optics and photo-luminescence. It is thought that the blue luminescence from the Ba2TiSi2O8 nanocrystallized glass originated from the presence of Ti4+ incorporated into the fresnoite- type structure. Nanocrystallized glasses with the composition of (50-x)BaO-xTiO2-50SiO2 (x=10, 15, 16.7 and 20) have been prepared by heattreatment at Tx (crystallization onset temperature) for 3 h, and their optical properties, photoluminescence (PL), XRD and Raman spectra have been examined. The absorption edges of the glasses were red-shifted and the absorption coefficient increased with an increase of TiO2. The glass subjected to the heat-treatment showed a dense formation of Ba2TiSi2O8 crystals. The XRD and Raman results show that the nanocrystallized glasses formed fresnoite phase up to TiO2 concentrations of 15 mol%. Furthermore, blue luminescence with a peak at the wavelength of around 470 nm was observed in the nanocrystallized glass, demonstrating the optical multifunctional nanocrystallized material such as non-linear optics and photo-luminescence. It is thought that the blue luminescence from the Ba2TiSi2O8 nanocrystallized glass originated from the presence of Ti4+ incorporated into the fresnoite- type structure.

Rapid synthesis and consolidation of TiSi2 by pulsed current activated combustion

Byung-Ryang Kim,Kee-Seok Nam,Jin-Kook Yoon,Ki-Tae Lee,도정만,손인진 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.2

Dense TiSi2 was synthesized by a pulsed current activated combustion synthesis method within 1 minute in a one step from mechanically activated powders of Ti and Si. Simultaneous combustion synthesis and consolidation were accomplished under the combined effects of a pulsed current and mechanical pressure. Highly dense TiSi2 with a relative density of up to 96% was produced under simultaneous application of 60 MPa pressure and the pulsed current. The average grain size and mechanical properties of the composite were investigated. Dense TiSi2 was synthesized by a pulsed current activated combustion synthesis method within 1 minute in a one step from mechanically activated powders of Ti and Si. Simultaneous combustion synthesis and consolidation were accomplished under the combined effects of a pulsed current and mechanical pressure. Highly dense TiSi2 with a relative density of up to 96% was produced under simultaneous application of 60 MPa pressure and the pulsed current. The average grain size and mechanical properties of the composite were investigated.

저저항 SALICIDE Gate 공정 개발 연구

김은하,최효직,고대홍 연세대학교 산업기술연구소 1999 논문집 Vol.31 No.2

Formations of TiSi₂ thin films by a solid state reaction between Ti thin films and Si substrates and the effects of the conditions of Si substrates have been investigated. Low-Resistant C54- TiSi films were formed by rapid thermal processes at 750℃ on the undroped Si (100) substrate, and at 800℃ on the As or B-doped Si (100) substrate as well as on As or B-droped poly-Si substrates. Cross-sectional TEM analyses confirmed the formation of small-grained C49 TiSi₂films by rapid thermal processes at 700℃ on pre-amorphized poly-Si substrate by As implantation. The temperatures of the transformation to the C5 phase decreased in small-grained C49- TiSi₂films. Finally, low resistant C54 TiSi₂thin films were selectively formed on gate, source, and drain regions by SALICIDE process with pre-amorphizaton of substrates. Microstructures and electrical properties of TiSi₂ film were investigated. Sheet resistance of TiSi₂ film on 1.2㎛-wide poly-Si gates was 3.8~4.2Ω/□, and XRD results showed phase formation of C54 TiSi₂ films.

A Study on the Electrical Characteristics of Ultra Thin Gate Oxide

Gum-Yong Eom 한국전기전자재료학회 2004 Transactions on Electrical and Electronic Material Vol.5 No.5

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a N2O gate oxide 30 Å by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for N2O gate oxide 30 Å, ultra thin gate oxide 30 Å was formed by using the N2O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi2 process was performed by RTP annealing at 850 ℃ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance(Ω/cont.) and higher capacitance-gate voltage(C-V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ~ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 Å proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 Å N2O gate oxide.

A Study on the Electrical Characteristics of Ultra Thin Gate Oxide

Eom, Gum-Yong The Korean Institute of Electrical and Electronic 2004 Transactions on Electrical and Electronic Material Vol.5 No.5

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ~ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

Simultaneous synthesis and consolidation of a nanocrystalline TiSi2-SiC composite by pulsed current activated combustion

손인진,고인용,Jeong-Hwan Park,Hyun-Kuk Park 한양대학교 세라믹연구소 2010 Journal of Ceramic Processing Research Vol.11 No.2

A dense nanophase TiSi2-SiC composite was synthesized by a pulsed current activated combustion synthesis method within 2 minutes in one step from mechanically activated powders of TiC and Si. Simultaneous combustion synthesis and consolidation were accomplished under the combined effects of a pulsed current and mechanical pressure. Highly dense TiSi2-SiC with relative density of up to 97% was produced under simultaneous application of a 60MPa pressure and the pulsed current. The average grain size and mechanical properties of the composite were investigated.

기판 조건에 따른 TiSi$_2$박막의 형성 및 전기적 특성 변화 고찰

김은하,고대홍 한국세라믹학회 1998 한국세라믹학회지 Vol.35 No.11

Si₃N₄/HfAlO 터널 절연막을 이용한 나노 부유 커패시터의 전기적 특성 연구

이동욱,이효준,김동욱,김은규,유희욱,조원주 한국진공학회 2011 한국진공학회 학술발표회초록집 Vol.40 No.0