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전계제한테와 측면 유리 절연막 사용한 전력용 p-n 접합 소자의 항복 특성 연구
허창수,추은상 대한전기학회 1996 전기학회논문지 Vol.45 No.3
Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.
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3.3kV SiC MOSFET 설계 및 제작을 위한 JFET 및 FLR 최적화 연구
구상모,강예환,이현우 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.3
The potential performance benefits of Silicon Carbide(SiC) MOSFETs in high power, high frequency power switching applications have been well established over the past 20 years. In the past few years, SiC MOSFET offerings have been announced by suppliers as die, discrete, module and system level products. In high-voltage SiC vertical devices, major design concerns is the edge termination and cell pitch design Field Limiting Rings(FLR) based structures are commonly used in the edge termination approaches. This study presents a comprehensive analysis of the impact of variation of FLR and JFET region on the performance of a 3.3 kV SiC MOSFET during. The improvement in MOSFET reverse bias by optimizing the field ring design and its influence on the nominal operating performance is evaluated. And, manufacturability of the optimization of the JFET region of the SiC MOSFET was also examined by investigating full-map electrical characteristics.
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