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심장보,강진기,이영국,Shim, Jang Bo,Kang, Jin Ki,Lee, Young Kuk 한국결정성장학회 2016 한국결정성장학회지 Vol.26 No.4
The conditions for chemical polishing and etching technique were investigated to reveal surface defects in RE : YAG ($RE=Nd^{3+},\;Er^{3+},\;Yb^{3+}$) single crystals grown by Czochralski method. The optimal condition for chemical polishing was in 85 % $H_3PO_4$ solution at $330^{\circ}C$ for 30 minutes with a specimen fixed in the vertical direction. In addition, the optimal condition for chemical etching was in 85 % $H_3PO_4$ solution at $260^{\circ}C$ for 1 hour, and $70{\sim}80{\mu}m$ sized triangular etch pits were observed on (111) face. As a result of defect density analysis, $1.9{\times}10^3/cm^2$ for Nd(1 %) : YAG, $4.3{\times}10^2/cm^2$ for Er(7.3 %) : YAG, and $5.1{\times}10^2/cm^2$ for Yb(15 %) : YAG were measured. Czochralski 법으로 성장한 RE : YAG ($RE=Nd^{3+}\;,Er^{3+}\;,Yb^{3+}$) 단결정의 표면 결함을 측정하는 chemical polishing 및 etching 조건에 대하여 조사하였다. 최적의 chemical polishing 조건은 시편을 수직 방향으로 고정하고 85 % $H_3PO_4$ 용액에서 $330^{\circ}C$, 30분 동안 진행한 것이었다. 또한 최적의 chemical etching 조건은 85 % $H_3PO_4$ 용액에서 $260^{\circ}C$, 1시간 동안 진행한 것이었고, (111) 면에 $70~80{\mu}m$ 크기의 삼각형 etch pit들이 관찰되었다. 결함 밀도 분석 결과, Nd(1 %) : YAG는 $1.9{\times}10^3$개/$cm^2$, Er(7.3 %) : YAG는 $4.3{\times}10^2$개/$cm^2$, Yb(15 %) : YAG는 $5.1{\times}10^2$개/$cm^2$로 측정되었다.
4H-SiC(0001) Epilayer 성장 및 쇼트키 다이오드의 전기적 특성
박치권,이원재,신병철,Park, Chi-Kwon,Lee, Won-Jae,Nishino Shigehiro,Shin, Byoung-Chul 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.