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Review of alternative gate stack technology research during the last decade
Byoung Hun Lee1,Paul Kirsch,Husam Alshareef,Prashant Majhi,Rino Choi,Seungchul Song,Hsing Huang Tseng,Raj Jammy 한국세라믹학회 2006 세라미스트 Vol.9 No.4
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during almost matches that of conventional SiO2-based gate dielectrics. However, many technical challenges remain to be resolved before alternative gate stacks can be introduced into mainstream technology. This paper reviews the reasearch in alternative gate stack technologies to provide insights for future reasearch.
Won-Ho Choi,Chang-Young Kang,Jung-Woo Oh,Byoung-Hun Lee,Majhi, Prashant,Hyuk-Min Kwon,Jammy, Raj,Ga-Won Lee,Hi-Deok Lee IEEE 2010 IEEE electron device letters Vol.31 No.11
<P>Analyzed herein is the effect of different germanium (Ge) concentrations on negative bias temperature instability (NBTI) and channel hot carrier (CHC) degradations in high-performance Si1-xGex pMOSFETs. It is shown that higher concentrations result in less NBTI degradation due to the increased barrier height between the SiGe and high-k dielectric interface, but it causes greater CHC degradation due to the decreased channel bandgap with higher Ge concentrations. Therefore, the tradeoff between NBTI and HC degradations for different Ge concentrations should be considered when developing high-performance Si1- xGex pMOSFETs.</P>
강민호,Ying-Ying Zhang,박기영,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,오정우,Prashant Majhi,Raj Jammy SEMATECH,Hi-Deok Lee 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Hydrogen (H) ion shower doping was proposed to improve the thermal stability of nickel germanide (NiGe), and its effects were analyzed in depth. As the post-germanidation annealing temperature was increased, the sheet resistance (Rsh) of the undoped sample increased sharply due to NiGe agglomeration while that of the H-doped samples showed a little increase at a temperature above 550℃ due to the suppression of NiGe agglomeration and Ni penetration. Hydrogen atoms in NiGe were found to significantly suppress local penetration of Ni atoms out of NiGe and hence contribute to the improvement the thermal stability of NiGe.
Ying-Ying Zhang,In-Shik Han,Shi-Guang Li,Soon-Yen Jung,박기영,신홍식,Ga-Won Lee,왕진석,이희덕,오정우,Prashant Majhi,Raj Jammy 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this research, the influence of an interlayer dielectric (ILD) capping layer on the thermal stability of Ni germanide was analyzed. The Ni germanide was formed on a Ge-on-Si substrate by using a one-step rapid thermal process (RTP) at 400 ˚C for 30 sec. We found little difference in the X-ray diffraction (XRD) results, but the proposed structure with oxide ILD capping layer showed better thermal immunity than that without one. Adopting an oxide ILD capping layer resulted in a lower sheet resistance, less surface roughness, and less Ni germanide agglomeration and penetration after high temperature post-germanidation annealing at 500 ˚C. Therefore, oxide capping is promising for improving the thermal stability of Ni germanide for nanoscale germanium metal oxide semiconductor field effect transistors (Ge MOSFETs).
Min Sang Park,Kyong Taek Lee,Chang Yong Kang,Gil-Bok Choi,Hyun Chul Sagong,Chang Woo Sohn,Byoung-Gi Min,Jungwoo Oh,Majhi, Prashant,Hsing-Huang Tseng,Lee, Jack C,Jeong-Soo Lee,Jammy, Raj,Yoon-Ha Jeong IEEE 2010 IEEE electron device letters Vol.31 No.10
<P>We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.</P>
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Zhang, Ying-Ying,Choi, Chel-Jong,Oh, Jungwoo,Han, In-Shik,Li, Shi-Guang,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Jammy, Raj,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.11