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Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions.
Park, Jong Cheon,Kim, Kyeong-Won,Gila, Brent P,Lambers, Eric S,Norton, David P,Pearton, Stephen J,Ren, Fan,Kim, Jin Kon,Cho, Hyun American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.11
<P>The valence band discontinuity (δE(v)) of Y2O3/InGaZnO4 (IGZO) heterojunctions was measured by a core-level photoemission method. The Y2O3 exhibited a band gap of -6.27 eV from absorption measurements. A value of δE(v) = 0.44 0.21 eV was obtained by using the Ga 2p3/2, Zn 2p3/2 and in 3d5/2 energy levels as references. Given the experimental bandgap of 3.2 eV for the IGZO, this would indicate a conduction band offset δE(c) of - 2.63 eV in the Y2O3/IGZO heterostructures and a nested interface band alignment.</P>
Band Offsets in YSZ/InGaZnO<sub>4</sub> Heterostructure System
Kim, J.K.,Kim, K.-W.,Douglas, E.A.,Gila, B.P.,Craciun, V.,Lambers, E.S.,Norton, D.P.,Ren, F.,Pearton, S.J.,Cho, H. American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.5
The energy discontinuity in the valence band (Delta E-V) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of Delta E-V = 0.57 +/- 0.12 eV was obtained by using Ga 2p(3/2), Zn 2p(3/2) and In 3d(5/2) energy levels as references. This implies a conduction band offset (Delta E-C) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.