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이산화질소 감지용 다중벽 탄소나노튜브 가스센서의 제작 및 감응 특성
조우성,문승일,김영조,이윤희,주병권 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.3
Carbon nanotubes(CNTs) were synthesized by thermal chemical vapor deposition(CVD) method. To fabricate CNT gas sensor, catalyst metal layer was deposited on microstructure. The CNT gas detecting layer was grown by thermal CVD method on the catalyst metal layer. In order to investigate the gas sensing characteristics of the fabricated CNT gas sensor, it was exposed in NO$_2$ gas and sensitivity, response, and recovery time were measured. As the result, this sensor has better reproductibility and faster recovery time than another CNT gas sensors.
비정질 게르마늄(a-Ge : H)의 전기전도 활성화에너지 및 결함밀도의 온도의존성
조우성,유종훈,Jo, U-Seong,Yu, Jong-Hun 한국재료학회 1995 한국재료학회지 Vol.5 No.6
수소화된 비정질 게르마늄 (a-Ge : H)에 대해 전기전도율이 297-423K 사이에서 연구되었다. 측정된 전기전도율의 Arrhenius 구성에 의해 pre-exponential 인수 $\sigma$$_{0}$ 및 활성화에너지 $E_{c}$- $E_{F}$가 결정되었다. 튀어오름(kink) 온도의 존재로 인해 전기전도율의 arrhenius 구성이 두 exponential 함수에 의해 표현되었고, 이에 의해 결정된 페르미준위의 통계이동계수 ${\gamma}$$_{F}$는 약 8.65$\times$$10^{-3}$eV/K이었으며, $\sigma$$_{0}$는 약 2$\Omega$$^{-1}$$cm^{-1}$ /이었다. 전기전도율 데이터로부터 결함밀도가 수치해석적 방법에 의해 계산되었고, 결함밀도는 측정된 온도영역하에서 약 2배 정도 변화하였다 변화하였다화하였다 The temperature dependence of the dark conductivity was studied on undoped hydrogenated amorphous germanium (a-Ge : H) over the range from 297 to 423 K. The pre-exponential factor $\sigma$$\_$0/ and activation energy E$\_$C/-E$\_$F/ are determined by an Arrhenius plot. The Arrhenius plot of the electrical conductivity shows a kink around the kink temperature and then is composed of two exponential functions. The obtained statistical shift ${\gamma}$$\_$F/ was about 8.65${\times}$10$\^$-3/eV/K and the pre-exponential factor $\sigma$$\_$0/ was about 2$\Omega$$\^$-1/cm$\^$-1/. A temperature dependent defect density is numerically calculated from the conductivity data. A change of the defect density is observed in the factor of about two in the range of the experimental temperature.