http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
조신호 한국조리과학회 1990 한국식품조리과학회지 Vol.6 No.2
This study was carried out to study the characteristics of 6 different Sikhaes and the activity of malt. The Sikhae, a kind of the traditional Korean beverages, is made from rice and malt. The result were summarized as follows. 1. Though it takes longer when malt is manufactured at the 15℃ than at the 25℃, more excellent malt can be obtained at the 15℃ because the activity of amylase is much higher. 2. The length of the whole malt is between 3 and 4㎝ when the activity of amylase is highest. When sprout grows longer than this, the activity of anzyme falls low remarkably and the worth of malt is decreased. 3. Among the material grain to make Sikhae, the saccharifying of glutinous rice was best and the saccharifying of barleys was not so good. 4. The Sikhaes from rice and glutinous rice are not easily swollen, but the Sikhae from the barly is easily swollen and turbid. 5. The result by the sensory evaluation to determine the ranking is in the following order; Glutinous rice, Tongil glutinous rice, Nonglutinous rice, Tongil rice, Hulled barley, Naked barley.
조신호,조선욱,Cho, Shin-Ho,Cho, Seon-Woog 한국재료학회 2012 한국재료학회지 Vol.22 No.3
Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.
Synthesis and Luminescence Properties of YTaO$_4$:RE$^{3+}$ (RE = Eu, Dy) Phosphors
조신호 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.7
YTaO$_4$:RE$^{3+}$ (RE = Eu or Dy) phosphor powders with different concentrations of activator ions were prepared using the solid-state reaction method. The effects of the concentration of activator ions on the structural, morphological, and photoluminescent properties of the yttrium tantalate phosphors were investigated. The XRD patterns demonstrated that the synthesized phosphors had two mixed phases of YTaO$_4$ and YTa$_7$O$_{19}$. The size and shape of the crystalline particles were estimated using scanning electron microscopy, and the particles showed a tendency to agglomerate. The emission spectra of the Eu$^{3+}$-doped YTaO$_4$ phosphors under excitation at 398~nm were composed of an intense red band at 615~nm and three weak bands centered at 596, 653, and 709~nm, respectively, indicating that most Eu$^{3+}$ ions in the YTaO$_4$ host lattice occupied sites without inversion symmetry. The intensities of all the emission bands reached maxima for the sample doped with 10~mol\% of Eu$^{3+}$ ions. For the Dy$^{3+}$-doped YTaO$_4$ phosphors, two major emission bands, one at 484~nm and the other at 580~nm, were observed. The results suggest that intense emission and color tunability can be achieved for the phosphors by doping the host lattice with the appropriate amount and type of rare-earth element.
적색 형광체 Gd<sub>2-x-y</sub>Li<sub>x</sub>Eu<sub>y</sub>O<sub>3</sub>의 발광 특성
조신호,변송호,김동국,박중철 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.3
We present a new toed phosphor, $Gd_{2-x-y}Li_xEu_yO_3$ with superior luminescent Properties compared to the commercially available red phosphor $Y_2O_3:Eu^{3+}$. The phosphor, with a diameter of about $2\mu\textrm{m}$, consists of the psedospherical particles in a regular array. The photoluminescence measurements as a function of the laser power and the Eu mole fraction were performed at zoom temperature The luminescence intensity linearly increases as both the laser power and the Eu mole fraction Increase. As for the dependence on cathodoluminescence, the incorporation of Eu and Li ions into $Gd_2O_3$ lattice brings about an increase in luminescent efficiency. The highest emission intensity for the phosphor occurs at the applied voltage of 500 V, its value is larger than that of $Y_2O_3:Eu^{3+}$ powder by 70%.
GaAs (311)A 기판 위에 성장된 탄소 도핑된 GaAs 에피층의 광여기 발광
조신호 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.3
We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.
조신호 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.6
The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-400oC. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at 100°C, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.