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Effect of different Al compositions on AlGaN/GaN HEMTs of Low-frequency noise
최여진,임기식,최진석,배창호,천동휘,서재인,최은경,안성진 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
AlxGal-xN/GaN heterostructures with two kinds of Al composition were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. The compositions of Al in the AlGaN layer were confirmed to be 13% and 28% using high resolution X-ray diffraction (HRXRD). AlxGal-xN/GaN high-electron mobility transistors (HEMTs) with different Al compositions were fabricated, characterized, and compared using the Hall effect, DC, and low-frequency noise (LFN)
김동석,김성남,김기원,임기식,강희성,곽은환,이정희,이성길,하종봉 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.52
An AlGaN/GaN-based normally-off GaN metal-oxide-semiconductor field-effect transistor (MOSFET) with a p-GaN buffer layer and using an over-recessed gate structure has been demonstrated for the first time. The p-GaN buffer layer is believed to have advantages of not only ensuring a fairly positive threshold voltage due to the depletion effect but also reducing the buffer leakage current. The over-recessed gate region and the whole surface of the AlGaN layer were covered with a high-quality atomic layer-deposited (ALD) Al_2O_3 layer, which play a role as an excellent gate insulator in the recessed gate region and a surface passivation layer in the ungated region between the source and the drain. The fabricated GaN MOSFET with 30-nm-thick ALD Al_2O_3 exhibited good device performances, such as a maximum drain current of 109 mA/mm, a maximum extrinsic transconductance of 30 mS/mm, a low specific on-resistance of 1.86 mΩ·cm^2, and a subthreshold slope of 365 mV/dec with a threshold voltage of 2.6 V.
김상일(Sang-Il Kim),임병옥(Byeong-Ok Lim),최길웅(Gil-Wong Choi),이복형(Bok-Hyung Lee),김형주(Hyoung-Joo Kim),김륜휘(Ryun-Hwi Kim),임기식(Ki-Sik Im),이정희(Jung-Hee Lee),이정수(Jung-Soo Lee),이종민(Jong-Min Lee) 한국전자파학회 2013 한국전자파학회논문지 Vol.24 No.2
본 논문에서는 Si가 도핑된 Modulation-doped AlGaN/GaN 이종 접합 구조를 가지는 전력증폭기용 MISHFET 소자를 제작하였다. 제작된 GaN TR 소자는 6H-SiC(0001)의 Substrate 위에 성장시켰으며, 180 nm의 gate length를 가진다. 제작된 소자를 측정한 결과, 837 ㎃/㎜의 최대 드레인 전류 특성, 177 mS/㎜의 gm(Tranconductance)을 가지며, fT는 45.6 ㎓, f㎃X는 46.5 ㎓로 9.3 ㎓에서 1.54 W/㎜의 전력 밀도와 40.24 %의 PAE를 가지는 것으로 확인되었다. This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited ㎃ximum drain current density of 837 ㎃/㎜ and peak transconductance of 177 mS/㎜. A unity current gain cutoff frequency was 45.6 ㎓ and maximum frequency of oscillation was 46.5 ㎓. The reported output power density was 1.54 W/㎜ and A PAE(Power Added Efficiency) was 40.24 % at 9.3 ㎓.