http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
윤여건,조용찬,김한상 대한기계학회 2014 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.28 No.12
Since the accumulation of liquid water droplets in gas flow channels significantly affects the performance of polymer electrolytemembrane (PEM) fuel cells, a comprehensive understanding of liquid water removal from the cell is of great importance to achieve optimalwater management. This study is mainly concerned with the ex situ measurement of water droplet growth and its removal in a nonreactingsimulated cathode channel for PEM fuel cells. To this end, the dynamic behavior of a liquid water droplet at the gas flow channel/gas diffusion layer (GDL) interface was investigated experimentally using a specially designed transparent cell device with differentGDLs. The effects of the GDL parameters (GDL thickness and micro-porous layer (MPL) inclusion) on water droplet removal aremainly investigated by analyzing the contact angle hysteresis with inlet air flow rate (Reynolds number). The critical Reynolds number isemployed to evaluate the droplet removal from the GDL surface. It is observed that the water droplet on a thinner GDL tends to be removedunder a higher critical Reynolds number. In addition, it is shown that the GDL with an MPL requires a higher critical Reynoldsnumber for the water droplet removal under the same droplet height. The results suggest that the structure of the GDL sample has considerableinfluence on the water droplet removal. It is thought that the data obtained from this study can provide useful insight into the designof a GDL with enhanced water removal capability for PEM fuel cells.
김기범,윤여건,박혜향,주승기 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.11
The effects of annealing condition and temperature gradient on the crystallization of amorphous silicon (a-Si) were investigated by metal-induced lateral crystallization (MILC). We performed poet annealing of a-Si using conventional rapid thermal annealing (RTA) and scan-type RTA. We found that the scan-type RTA was more favorable in term of growth rate than the conventional RTA. With the temperature profile, we carried out the theoretical calculation of the MILC length using the Arrhenius model and compared with the experimental value. Also, we found that there were clear temperature gradient effects on the crystallization of a-Si. Mosaic patterns of Ni on top of the a-Si enable us to measure the effects of temperature gradient, that is, positive and negative gradient, on the crystallization of a-Si. As a result, a-Si with positive temperature gradient was crystallized faster than that of with negative temperature gradient.
이온 질량 주입이 금속 유도 측면 결정화에 미치는 영향
김태경,김기범,윤여건,김창훈,이병일,주승기,Kim, Tae-Gyeong,Kim, Gi-Beom,Yun, Yeo-Geon,Kim, Chang-Hun,Lee, Byeong-Il,Ju, Seung-Gi 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.4
금속 유도 측면 결정화에 의한 다결정 실리콘 박막 트랜지스터의 제작에서 이온 질량 주입이 MILC 속도 및 거동에 미치는 영향을 분석하였다. 비정질 실리콘에 도펀트를 주입하거나 이온충돌을 가하면 MILC의 속도가 50% 이상 감소하고 MILC선단이 불균일 해졌다. IMD에 따른 비정질 실리콘 박막의 성질 변화를 분석하기 위하여 자외선 반사도 및 표면 거칠기를 관찰하였고, 이온 충돌에 의한 표면 거칠기의 증가가 MILC 속도 감소와 균일도에 영향을 주는 것으로 나타났다. Ion mass doping method has been implemented for the fabrication of large area electronic devices such as TFT-LCD. In this work, the effect of ion mass doping on the velocity and the behavior of MILC was investigated. When amorphous silicon was either doped or bombarded by accelerated ions, MILC velocity was reduced by over 50% and the front edge of MILC became coarse. In order to analyze the dependence of silicon film's properties on ion mass doping, ultraviolet reflectance and sulfate roughness were investigated. Both the velocity and the behavior of MILC were found to be related with the increase of surface roughness by ion bombardment.
박막트랜지스터의 채널 내에 형성된 금속 유도 측면 결정화의 경계가 누설전류에 미치는 영향
김태경,김기범,윤여건,김창훈,이병일,주승기,Kim, Tae-Gyeong,Kim, Gi-Beom,Yun, Yeo-Geon,Kim, Chang-Hun,Lee, Byeong-Il,Ju, Seung-Gi 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.4
금속 유도 측면 결정화 (Metal-Induced Lateral Crystallization; MILC)에 의해 저온다결정 실리콘 박막트랜지스터를 형성할 때 Ni박막을 게이트와 소오스/드레인간 경계로부터 거리를 달리하여 형성한 뒤 결정화시킴으로써 소오스와 드레인으로부터 결정화가 진행되어 서로 만나는 경계 면을 채널 내부 외부에 인위적으로 위치시킬 수 있었고 이들의 전기적 특성비교를 통하여 MILC경계가 트랜지스터 특성에 미치는 영향을 고찰할 수 있었다. MILC 경계를 채널 내부로부터 제거시킴으로써 On Current, Subthreshold slope 특성을 향상시킬 수 있었고 누설전류 특성도 크게 향상시킬 수 있었다. 채널 내부에 MILC 경계가 존재할 경우 전기적 스트레스를 인가함에 따라 누설전류의 양이 감소하였고, 전체 감소량은 채널 폭이 넓을수록 증가하였고 채널길이에는 무관하였다. In the case of metal-induced lateral crystallization (MILC) for low temperature poly-Si TFT, offset length between Ni-thin film and the sides of gate could be modified to control the location of MILC boundary. Electrical characteristics were compared to analyze the effect of MILC boundary that was located either in or out of the channel region of the TFT. By removing the MILC boundary from channel region, on current, subthreshold slope and leakage current properties could be improved. When MILC boundary was located in the channel region, leakage current was reduced with electrical stress biasing. The amount of reduction increased as the channel width increased, but it was independent of the channel length.
급속 열처리시 금속 흡수층을 이용한 금속 유도 측면 결정화 속도 향상
김태경,이병일,주승기,윤여건 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.4
We proposed a rapid thermal annealing process with Mo heat absorption layer for the purpose of an enhancement of Metal-Induced Lateral Crystallization(MILC) rate of amorphous silicon (a-Si) thin films on glass substrates. MILC rate was enhanced by using Mo absorption layer with relatively low lamp power than without Mo layer. With Mo layer, amorphous silicon was laterally crystallized about 20 ㎛ only 1 minute at 620℃. This is because Mo film can absorb the light more effectively than a-Si thin film and can be higher temperature about 290℃ than that of a-Si thin film. Enhancement of MILC rate by Mo layer was found to be more effective as thickness of Mo increase, because the thicker Mo layer can absorb the more light. MILC rate, however, decreased when insulating layer(SiO₂) between Mo and a-Si layer was inserted.