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Simulation and Analysis of Radio-Frequency Single-Electron Transistor (RF-SET) by SPICE
유윤섭,S. H. Son,황성우,N. K. Park,박형근,오정현,안도열 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
A simulation method for are ection-type radio-frequency single-electron transistor (RF-SET) is developed. By introducing the equivalent circuit of propagating microwaves through a coaxial cable, we solve the time-dependent master equation for RF-SETs self-consistently by using the conventional circuit simulator SPICE including the time-dependent SET current model. By examining re ected waves from a typical RF-SET, we also show that the method successfully produces clear Coulomb oscillation and reection power strongly correlated with the SET's conductance, which is in good agreement with the experimental data published previously.
3차원 확률분포함수를 고려한 단일전자 기본 논리 셀의 해석
유윤섭,황성우 대한전자공학회 1996 전자공학회논문지-A Vol.33 No.7
Detailed analyses have been presentd for a basic single-electron-logic-cell consisting of two single-electron-transistors (SETs) in series. The interconnection between two SETs has been treated as a coulomb island and the joint probability density function of all three coulomb islands (two from the SETs and one form the interconnection) has been exactly calculated. The average number of electrons in each coulomb island and the steady-state ouptut voltage have been calculated and analyzed.
유윤섭,이세한,D. S. Kim,Y. C. Jung,황성우,안도열 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
We present a compact model for a bottom-gate depletion-mode nanowire field-effect transistor (NWFET) including a Schottky diode model for efficient circuit simulation. The NWFET model is based on an equivalent circuit corresponding to two back-to-back Schottky diodes for the metalsemiconductor (MS) contacts separated by a depletion-mode NWFET for the intrinsic NWFET. The previously developed depletion-mode NWFET model is used for the intrinsic part of the NWFET. The Schottky diode model for the M-S contacts includes the thermionic field emission (TFE) and the thermionic emission (TE) mechanisms for reverse bias and forward bias, respectively. Our newly developed model is integrated into Advanced Design System (ADS), in which the extrinsic part (Schottky diode model) and the intrinsic part of the NWFET are developed by utilizing the symbolically defined device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce the experimental results within 10% errors. The mobilities extracted from the newly developed NWFET model are compared with those extracted from the previously reported NWFET model which replaced the Schottky diodes with series resistances.
유윤섭 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS)contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.
Compact Model of a pH Sensor with Depletion-Mode Silicon-Nanowire Field-Effect Transistor
유윤섭 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.4
A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao–Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson’s equation in the cylindrical coordinate system. The threshold–voltage shift in the drain–current model is obtained by solving the nonlinear Poisson–Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain–current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.
유윤섭 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.4
A full-range analytic drain current modelfor depletion-mode long-channel surrounding-gatenanowire field-effect transistor (SGNWFET) isproposed. The model is derived from the solution ofthe 1-D cylindrical Poisson equation which includesdopant and mobile charges, by using the Pao-Sahgradual channel approximation and the full-depletionapproximation. The proposed model captures thephenomenon of the bulk conduction mechanism in allregions of device operation (subthreshold, linear, andsaturation regions). It has been shown that thecontinuous model is in complete agreement with thenumerical simulations.