Binder Film을 이용한 LTCC Sheet 적층

신효순,최용석,박은태,Shin, Hyo-Soon,Choi, Yong-Seok,Park, Eun-Tae 한국세라믹학회 2006 한국세라믹학회지 Vol.43 No.4

In the lamination process of multi-layer ceramic modules, the occurrence of delamination comes into repeatedly. To completely improve the lamination process of LTCC sheets, a binder film was introduced between the layers. The binder film did not originate the delamination until the thickness under $40{\mu}m$. After lamination, the thickness of the binder film was determined by the infilteraion of binder by the pressure, and after the bake-out, was dependent on the decomposition of binder resin. Any detectable defect was not observed in the multilayer structure with Ag inner electrodes.

Hydroxyapatite/Gelatin복합체의 제조 및 압축강도

신효순,구광모,이석기,Shin Hyo-Soon,Koo Kwang-Mo,Lee Suk-Kee 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.9

합성 수산화아파타이트(HAp)와 바인더로서 젤라틴(GEL)을 사용하여 공침법으로 조성비가 서로 다른 HAp/GEL 균질복 합체 4종을 제조하였고, 이 균질복합체를 냉간정수압법으로 성형한 후 공기중에서 여러조건으로 소결하였다. HAp/GEL composite의 소결체는 XRD 및 FT-IR로 결정성 및 구조를 조사하였고, 또한 소결시편은 만능재료시험기(UTM)로 압축강도를 측정하였으며, 파단된 소결시편의 표면은 SEM으로 관찰하였다 HAp/GEL composite는 120$0^{\circ}C$에서 3시간 소결하였을 경우 부분적인 $\alpha$, $\beta$-tricalcium phosphate로 상전이가 일어났다. 소결체의 기공률은 1.2-30.2% 범위였고, 소결시편의 압축강도는 16.2-60.1㎫ 범위의 값을 나타냄으로써 기공율에 비해 높은 강도를 나타내었다. Hydroxyapatite (HAp)/Gelatin (GEL) homogeneous composites of four different composition ratio were prepared by the co-precipitation process with synthetic HAp and GEL as a binder, HAP/GEL composites were molding by cold isostatic pressing and were sintering by various condition in air. Crystallinity and structure of sintered HAp/GEL composites were investigated by XRD and FTIR. Also, the compressive strength and the fracture surface of sintered specimens were measured by UTM and SEM. HAp/GEL composites showed a phase transformation to partially ${\alpha}$, ${\beta}$-tricalcium phosphate at the sintered condition of 1200$^{\circ}C$ for 3 h. The porosity of sintered body was in the range of 1.2-30.2%. The compressive strength of the sintered specimens was in the range of 16.2-60.1㎫, and its strength of sintered HAp/GEL comosites was higher than expected when the porosity was considered.

소결온도와 B₂O₃첨가량에 따른 Mn첨가 PMN-PZT의 유전 및 압전특성의 변화

신효순,Shin Hyo-Soon 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.9

우수한 압전 특성을 나타내는 것으로 알려진 Mn 첨가 PMN-PZT의 저온소결 첨가제가 실험되었다. 저온소결 첨가제로는 B$_2$O$_3$가 사용되었고 소결온도와 B$_2$O$_3$ 첨가량의 변화가 소결성과 유전 및 압전특성의 변화에 미치는 영향을 조사하였다. B$_2$O$_3$ 첨가량과 소결온도를 변화시킨 결과 B$_2$O$_3$ 첨가량 2wt% 이하 100$0^{\circ}C$이하 조건에서 소결밀도가 증가하여 B$_2$O$_3$가 저온소결재로 작용하였다. 그러나 10$50^{\circ}C$ 이상에서는 주조성인 PMN-PZT보다 낮은 소결밀도를 나타내었다. B$_2$O$_3$ 첨가에 따른 유전상수($\varepsilon$$_{33}$ $^{T}$ )의 변화를 확인할 결과 B$_2$O$_3$ 2wt% 100$0^{\circ}C$ 조건에서 1000의 유전율을 나타내었다. B$_2$O$_3$ 첨가량이 전기-기계 결합계수(k$_{p}$ )와 압전상수(d$_{33}$ )에 큰 저하를 가져오지 않는 B$_2$O$_3$ 첨가 한계는 2wt% 이하로 나타났다. 이때, k$_{p}$ 는 약 50%, d$_{33}$ 는 약 300(${\times}$$10^{-12}$ C/N) 정도의 값을 얻을 수 있었다. B$_2$O$_3$ 첨가는 기계적 품질계수(Q$_{m}$ )의 증가를 가져왔으며 0.5wt% B$_2$O$_3$ 첨가 110$0^{\circ}C$ 소결 조건에서 1700의 품질계수를 나타내었다. 유전손실은 B$_2$O$_3$ 첨가에 따라 큰 변화 없이 0.5% 이하의 값으로 나타났다. The additive of low temperature sintering in Mn-doped PMN-PZT known as high piezoelectric materials was studied in this experiment. B$_2$O$_3$ was used for the additive of low temperature sintering. The effects of sintering temperature in dielectric, and piezoelectric properties were investigated with the amounts of B$_2$O$_3$. Sintered density was increased in comparison with no addition and under 2wt% B$_2$O$_3$ and lower sintering temperature than 100$0^{\circ}C$. Therefore, in the low sintering temperature, the densification was improved by the addition of the B$_2$O$_3$. However, the sintering density was lower than that of the main composition in the case of the sintered at over 10$50^{\circ}C$. Dielectric constant with the addition of B$_2$O$_3$ was evaluated. The dielectric constant was 1000 2 wt% of B$_2$O$_3$ and sintered at 100$0^{\circ}C$. Under 2wt% of B$_2$O$_3$, the electromechanical coupling factor and the piezoelectric constant were not so much decreased. The electromechanical coupling factor and the piezoelectric constant were 50% and 300(${\times}$10$^{-12}$ C/N) respectively. The mechanical quality factor was increased with B$_2$O$_3$. The mechanical quality factor was 1700 at 0.5wt% B$_2$O$_3$ and sintered at 110$0^{\circ}C$. Dielectric loss was less than 0.5% regardless of the amount of B$_2$O$_3$.

Cr을 첨가한 ZnO-Sb₂O₃ 세라믹스의 바리스터 응용

홍연우,신효순,여동훈,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jin-Ho 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.11

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

Anorthite계 LTCC소재에서 Glass 입도와 함량 변화에 따른 강도 특성

구신일,신효순,여동훈,홍연우,김종희,남산,Gu, Sin-Il,Shin, Hyo-Soon,Hong, Youn-Woo,Yeo, Dong-Hun,Kim, Jong-Hee,Nahm, Sahn 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.11

Among LTCC material for substrate, the crystallized anorthite system was mainly studied as high strength material. However, specific factors that have affected on strength of material were studied insufficiently on anorthite system. In this study, the composition of anorthite glass was Ca-Al-Si-Zn-O. The changes of phase and microstructure were observed with the amount and the particle size of glass and the sintering temperature. It was studied that the factors affected on the strength of material. Phases of anorthite and $ZnAl_2O_4$ were formed with the increase of sintering temperature. The $Al_2O_3$ phase was increased with $Al_2O_3$ amount, acted as filler, and the strength of material is increased with $Al_2O_3$ phase. But phases of anorthite and $ZnAl_2O_4$ didn't affect on the strength of material. In the case of 60 vol% glass amounts and below $3.2\;{\mu}m$ of glass particle size, the strength of material was decreased. It is thought that the decrease of strength was due to non-homogeneous mixing between glass powder and filler.

ZnO-Bi₂O₃-Sb₂O₃ 세라믹스의 전기적 특성

홍연우,신효순,어동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

Mn을 첨가한 ZnO-TeO₂ 세라믹스의 소결과 전기적 특성

홍연우,신효순,여동훈,김종희,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Kim, Jin-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1

We investigated the sintering and electric properties of ZnO-1.0 at% $TeO_2$ (ZT1) and 1.0 at% Mn-doped ZT1(ZT1M1) system. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ or $Zn_2Te_3O_8$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. In ZT1M1 system, also, the densification of ZnO was retarded up to $1000^{\circ}C$ and then reached > 90% of theoretical density above $1100^{\circ}C$. It was found that a good varistor characteristics(nonlinear coefficient $a{\sim}60$) were developed in ZT1M1 system sintered at $1100^{\circ}C$ due to Mn which known as improving the nonlinearity of ZnO varistors. The results of C-V characteristics such as barrier height (${\Phi}_b$), donor density ($N_D$), depletion layer (W), and interface state density ($N_t$) in ZT1M1 ceramics were $1.8{\times}10^{17}cm^{-3}$, 1.6 V, 93 nm, and $1.7{\times}10^{12}cm^{-2}$, respectively. Also we measured the resistance and capacitance of grain boundaries with temperature using impedance and electric modulus spectroscopy. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots.

유전함수를 이용한 ZnO-Bi₂O₃-Mn₃O₄ 바리스터의 a.c. 특성 분석

홍연우,신효순,여동훈,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jin-Ho 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.12

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

상용 LTCC 소재의 슬러리 제조 공정에서 분산성 평가 및 최적화

권혁중,신효순,여동훈,김종희,조용수,Kwon, Hyeok-Jung,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jong-Hee,Cho, Yong-Su 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4

Laminated LTCC components of high integrity, fabricated by thick film process, are applied to industrial field of IT technology along with miniaturization trend of electronic devices. Dispersion states were examined by several evaluation methods with MLS-22, which is one of commercial LTCC powders, to achieve optimal dispersion as basis for stable LTCC fabrication process. Slurry viscosity, surface roughness of dip-coated slide glass, sedimentaion of slurry, and SEM observation of dried surface were utilized with respective amount change of various commercial dispersants. Among these commercial dispersants, optimal dispersion state was obtained with 0.4 wt% of BYK-111, from the results of various evaluation methods.

Mn₃O₄ 함량에 따른 ZnO의 결함과 입계 특성

홍연우,신효순,여동훈,김진호,Hong, Youn-Woo,Shin, Hyo-Soon,Yeo, Dong-Hun,Kim, Jin-Ho 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.12

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.