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이동원,남송민 한양대학교 세라믹연구소 2010 Journal of Ceramic Processing Research Vol.11 No.1
In an aerosol deposition method, factors affecting the surface roughness of Al2O3 thick films deposited on Cu substrates at room temperature were studied to propose guidelines for the growth of aerosol-deposited ceramic films with a flat and smooth surface morphology. The surface roughness and deposition rates of aerosol-deposited Al2O3 films strongly depended on the initial surface roughness of substrates. Even on flat substrates, however, their surface roughness became worse with an increase of their film thickness. Through the investigation of surface morphologies from the initial growth stages to the final,it was revealed that the deterioration of the surface roughness of Al2O3 films on flat substrates was substantially associated with the evolution of craters during the deposition. The fundamental cause of these results was explained by impact of hard Al2O3 particles above 1 ìm in size by comparison with the surface morphologies of the aerosol-deposited Ag or polyimide films.
오종민,김형준,남송민 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.41
BaTiO3 thin films having different thickness of 0.2-2.2 μm were fabricated on flat Cu and stainlesssteel (SUS) substrates by using aerosol deposition (AD) at room temperature. The dependence of the leakage current on the thickness of the BaTiO3 thin films was measured, and the leakage current mechanisms were investigated to clarify the origins of the leakage currents. As a result of the measurements and examination, the leakage currents are highest for the thinnest BaTiO3films, and by decreasing the thickness of the films, the leakage current mechanism was changed from Poole-Frenkel emission to a modified-Schottky (M-S) emission. In particular, in the case of BaTiO3thin films with 0.2 μm-thick which is minimum thickness on SUS substrates, the dominant leakage current mechanism was M-S emission at low electric fields, the Fowler-Nordheim tunneling appeared as the primary leakage current mechanism at high electric fields due to electric-field concentration. Consequently, the origins of leakage current are suggested to be microscopic defects, such as oxygen vacancies, acting as donors in the BaTiO3 films and the ununiform electric-field concentration at the rough interfaces between the BaTiO3 films and the metal substrates at high electric fields.