BTMSM/O₂ 유량변화에 따른 SiOCH 박막의 유전상수 특성

김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

RF magnetron sputtering법으로 형성된 ZnO 박막의 투명반도체 특성

김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.1

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

RF 파워에 따라 스퍼터된 Al doped ZnO 박막의 구조적, 광학적, 전기적 특성

김종욱,김덕규,김홍배,Kim, Jong-Wook,Kim, Deok-Kyu,Kim, Hong-Bae 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

RF magnetron sputtering법으로 제조한 Al doped ZnO 박막의 산소함량과 압력변화에 따른 전기적 특성 변화

김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.4

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

기공형성에 의한 SiOCH 박막의 유전 특성

김종욱,박인철,김홍배,Kim, Jong-Wook,Park, In-Chul,Kim, Hong-Bae 한국반도체디스플레이기술학회 2009 반도체디스플레이기술학회지 Vol.8 No.3

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

BTMSM/O₂ 유량변화에 따른 SiOCH 박막 결합모드의 2차원 상관관계 특성

김종욱,황창수,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

Reaction Gas 변화에 따라 스퍼터된 Ga Doped ZnO 박막의 특성

김종욱,김홍배,Kim, Jong-Wook,Kim, Hong-Bae 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.4

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

열처리한 SiOCH 박막의 결합모드와 유전상수 특성

김종욱,황창수,박용헌,김홍배,Kim, Jong-Wook,Hwang, Chang-Su,Park, Yong-Heon,Kim, Hong-Bae 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

내재된 균열을 가진 원자로압력용기의 가압열충격하의 파괴역학적 건전성 해석

김종욱(Jong-Wook Kim),이규만(Gyu-Mahn Lee),김태완(Tae-Wan Kim),박근배(Keun-Bae Park) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5

The RPV integrity is ensured by a proper margin between its loads bearing capacity given by vessel design and the acting loads, which could occur during a plant operation. The objective of this study is to evaluate the integrity of the embedded crack in a RPV under a pressurized thermal shock condition by applying deterministic fracture mechanics. The three-dimensional finite element analyses, including the thermal and mechanical calculations, were performed using the finite element analysis program.

열처리한 SiOCH 박막의 기공형성에 의한 유전특성

김종욱(Jong-Wook Kim),박인철(In-Chul Park),김홍배(Hong-Bae Kim) 한국정보기술학회 2009 Proceedings of KIIT Conference Vol.2009 No.-

low-k 유전상수를 갖는 층간 절연막 (ILD)을 BTMSM 프리커서를 이용하여 24sccm에 32sccm까지 2sccm씩 증가시키며 PECVD 방식으로 증착하였다. 상온에서 증착된 SiOCH 박막을 400℃와 500℃에서 30분 동안 진공 중에서 열처리하였다. FTIR 분석 결과, BTMSM 유량이 증가할수록 SiOCH 박막의 탄소 함유량이 29.5%에서 32.2%로 증가하였으며, 500℃에서 열처리한 26sccm 샘플은 32.8% 증가하였다. 1㎒에서 측정한 유전상수는 26sccm 샘플에서 2.32로 가장 낮았고, 500℃에서 열처리 후 2.05로 감소하였다. 누설전류 또한 26sccm 샘플에서 8.7× 10?? A/㎠로 가장 낮았다. BTMSM 유량이 26sccm인 SiOCH 박막에서 화학적 결합의 Shift 현상이 나타났고, 탐소함유량은 가장 높았으며 유전상수 또한 가장 낮은 값을 갖았다. We studied the delectrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Then, SiOCH thin film deposited at room temperature was annealed at temperature of 400℃ and 500℃ for 30 minutes in vacuum. With comparing the deconvoluted areas of bonding groups in SiOCH FTIR absorbance apectrum, the relative carbon content of SiOCH thin film increased from 29.5% to 32.2% as BTMSM flow rate increase, and increased by 32.8% in 26 sccm specimen after 500℃ annealing. From measurement of dielectric constant by 1㎒ C-V measurements, the lowest dielectric constant reached to 2.32 in case of 26 sccm as-deposited SiOCH thin film, and decreased to 2.05 after 500℃ annealing. The leakage current was about by 8.7× 10?? A/㎠ in the specimen. The shift of chemical bond in SiOCH thin film appeared also in case of 26 sccm of BTMSM flow rate.