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Voltage Controlled Equivalent Circuit of a Nanowire Memristor
김부강,전민현,송한정 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.12
In this paper, we describe a voltage-driven equivalent circuit of a nanowire memristor based on a metal oxide semiconductor field effect transistor (MOSFET) variable resistor for circuit simulation. The proposed model makes various hysteresis I-V (current−voltage) loops of the memristor based on the control voltage. The equivalent circuit is composed of two multipliers, several fixed resistors, three amplifiers, and a variable MOS resistor for slope control of the emulated memristor. The electric characteristics, such as the time waveform and the current−voltage curves, were examined by using the SPICE (simulation program with integrated circuit emphasis). We obtained many hysteresis I-V curves from the circuit model of the equivalent memristor. In addition, the circuit was experimentally implemented by using a hybrid electronic circuit on which measurements were taken. The simulated data and the measured results obtained through the time series waveforms and the current−voltage curve plots verified that the nonlinear dynamics of the nanowire memristor could be created and controlled by using a variable MOS resistor.
멤리스터의 전기적 특성 분석을 위한 PSPICE 회로 해석
김부강(Kim, Boo-Kang),박호종(Park, Ho-Jong),박용수(Park, Yong-Su),송한정(Song, Han-Jung) 한국산학기술학회 2014 한국산학기술학회논문지 Vol.15 No.2
본 논문에서는 PSPICE 프로그램을 이용하여 멤리스터 소자의 전기적 특성을 해석하였다. 멤리스터의 PSPCE 회로해석을 위한 모델링을 제안하고, 멤리스터의 전류-전압 특성을 분석하였고, 멤리스터의 입력전압에 따른 비선형 저항의 변화를 DC해석과 과도해석을 통하여 확인하였다. 또한, 멤리스터 저항의 직렬과 병렬연결에 따른 특성변화를 보았다. 한편, 멤리스터와 커패시터로 이루어진 M-C 회로를 구성하여 충전과 방전특성의 변화를 종래의 R-C회로와 비교분석하였다. 250 Hz의 구형파 입력신호 인가 시, 멤리스터-커패시터 회로의 경우에, 상승시간(Tr) 0.58 ms, 하강 시간 (Tf) 1.6 ms, 지연시간 0.6ms를 나타내었다. This paper presents a Electrical characteristics of the Memristor device using the PSPICE for circuit analysis. After making macro model of the Memristor device for circuit analysis, electric characteristics of the model such as time analysis, frequency and DC analysis according to the input voltage were performed by PSPICE simulation. Also, we made simple circuits of memristor series and parallel structure and analyzed the simulated SPICE results. Finally, we made a memristor-capacitor (M-C) circuit. charge and discharge characteristics were analyzed. In case of input pulse signal of 250 Hz, the Memristor-capacitor circuit showed delay time of 0.6ms, rising time of 0.58 ms and falling time of 1.6 ms.
MOS 가변저항을 이용한 로렌츠 회로의 PSPICE 해석
지성현(Ji, Sung-Hyun),김부강(Kim, Boo-Kang),남상국(Nam, Sang-Guk),응우웬 반 하(Nguyen, Van Ha),박용수(Park, Yong-Su),송한정(Song, Han-Jung) 한국산학기술학회 2015 한국산학기술학회논문지 Vol.16 No.2
논문에서는 공학적 응용을 위한 로렌츠 카오스 회로를 연산증폭기, 곱셈기 및 MOS 가변저항 등을 이용하여 전자회 로로 구현하였다. PSPICE 모의실험을 통하여, MOS 저항의 전압 변화에 따라, 로렌츠 회로가 주기상태, 카오스 상태로 변하 는 것을 시간파형, 주파수 특성 및 위상특성 등을 통하여 보였다. 제안하는 회로를, 하드웨어로 구현하여 MOS 저항의 전압변 화에 따라 로렌츠 회로의 카오스 다이내믹스가 제어됨을 확인하였다 In this paper, chaotic circuit of the voltage controlled Lorentz system for engineering applications has been designed and implemented in an electronic circuit. The proposed circuit consists of MOS variable resistor, multipliers, capacitors, fixed resistors and operational amplifiers. The circuit was analysed by PSPICE program. PSPICE simulation results show that chaotic dynamics of the circuit can be controlled by the MOS variable resistor through time series analysis, frequency analysis and phase diagrams. Also, we implemented the proposed circuit in an electronic hardware system with discrete elements. Measured results of the circuit showed controllability of the circuit using the MOS resistor