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김원진,이진호,김륜나,이동희,김우병 한국재료학회 2024 한국재료학회지 Vol.34 No.3
In this study, we introduce a novel TiN/Ag embedded TiO2/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (Vo). The current-voltage (I-V ) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.
실리콘 절삭 슬러지를 이용한 TiO<sub>2</sub> 코팅 나노 실리콘 입자의 제조
서동혁,임현민,나호윤,김원진,김륜나,김우병,Seo, Dong Hyeok,Yim, Hyeon Min,Na, Ho Yoon,Kim, Won Jin,Kim, Ryun Na,Kim, Woo-Byoung 한국분말재료학회 (*구 분말야금학회) 2021 한국분말재료학회지 (KPMI) Vol.28 No.5
Here, we report the development of a new and low-cost core-shell structure for lithium-ion battery anodes using silicon waste sludge and the Ti-ion complex. X-ray diffraction (XRD) confirmed the raw waste silicon sludge powder to be pure silicon without other metal impurities and the particle size distribution is measured to be from 200 nm to 3 ㎛ by dynamic light scattering (DLS). As a result of pulverization by a planetary mill, the size of the single crystal according to the Scherrer formula is calculated to be 12.1 nm, but the average particle size of the agglomerate is measured to be 123.6 nm. A Si/TiO<sub>2</sub> core-shell structure is formed using simple Ti complex ions, and the ratio of TiO<sub>2</sub> peaks increased with an increase in the amount of Ti ions. Transmission electron microscopy (TEM) observations revealed that TiO<sub>2</sub> coating on Si nanoparticles results in a Si-TiO<sub>2</sub> core-shell structure. This result is expected to improve the stability and cycle of lithium-ion batteries as anodes.
오승환,임현민,이동희,서동혁,김원진,김륜나,김우병,Oh, Seung-Hwan,Yim, Hyeonmin,Lee, Donghee,Seo, Dong Hyeok,Kim, Won Jin,Kim, Ryun Na,Kim, Woo-Byoung 한국재료학회 2022 한국재료학회지 Vol.32 No.9
In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm<sup>2</sup> and Test was 5.61 × 10 A/cm<sup>2</sup>, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10<sup>12</sup> cm<sup>-2</sup> in slow state density and 0.41 × 10<sup>13</sup> cm<sup>-2</sup> in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10<sup>11</sup> cm<sup>-2</sup> in slow state density and 1.33 × 10<sup>12</sup> cm<sup>-2</sup> in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.
임현민,이진호,김원진,오승환,서동혁,이동희,김륜나,김우병,Yim, Hyeonmin,Lee, Jinho,Kim, Won Jin,Oh, Seung-Hwan,Seo, Dong Hyeok,Lee, Donghee,Kim, Ryun Na,Kim, Woo-Byoung 한국재료학회 2022 한국재료학회지 Vol.32 No.9
A spin coating process for RRAM, which is a TiN/TiO<sub>2</sub>/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V<sub>O</sub>), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti<sup>3+</sup> and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10<sup>4</sup>. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO<sub>2</sub>/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.