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강성래 한국레져스포츠학회 1999 한국레져스포츠학회지 Vol.3 No.1
The study is for increasing in the quality and the quantity of the leisure-sport paricipation of the old persons for the future society. The most important thing is that the old persons themselves partcipate in the leisure-sports with concerns actively.
강성래 한국레져스포츠학회 1997 한국레져스포츠학회지 Vol.1 No.1
I studied about some devices for the realization of Olympicism, based on the normalization and development of physical training in school. 1. We should have a correct understanding of the value and necessisty of physical training, and invest much money in physical facilities for many people rather than the training of a few representative players. 2. Coaches should have much special knowlege inclusively and a good human nature as well as physical technics. 3. We should make the students take an interest in physical training rather than a sense of rivalry and make them learn the tevhnics of various events, escaping from the training of some popular events. thus, schools are very appropriate places to realize the Olympic Spirit, and when they are to realize the spirit, we can produce many well -rounded person and furthermore reach the big goal - world peace and international understanding, we belive.
AFM을 이용한 Nanometer-Scale Lithography에 관한 연구
강성래,최재혁,최창훈,박선우 서울시립대학교정보기술연구소 2000 정보기술연구소 논문집 Vol.2 No.-
As resist material of AFM lithography, we applied ODMS(octadecyldimethylmethylmethoxysilane) and terpolymer(p-MMA-BPMA-MAA) for nano-lithography. And, we found the optimum processing condition ell each material. We prepared each samples the through chemical deposition and spin coating on Si water Through applying negative voltage to AFM tip and scanning the surface of sample, we obtained the pattern. In the case of ODMS, when the scanning was tarried out at the bias voltage -22V, scan speed 120㎛/s, and, exposure current 0.3~0.7㎂, the protruding patterns were appeared in the exposed regions due to the anodic oxidation. And, after developing in the diluted BOE(1:50) for 1 minute, we obtained the positive patterns of line width 98㎚. In the case of terpolymer, we exposed it at the bias voltage -16V, scan speed 5㎛/s, and, exposure current 0.3-0.7㎂. And, after developing in the diluted TMA(1.250) for 5 seconds, we obtained the positive pattern of lute width 59nm.