<P>Although the ion-sensitive field effect transistor (ISFET)-based biosensor has a great potential for point-of-care testing systems, the current drift still remains as a challenging issue for its commercialization. Furthermore, the drift makes...
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https://www.riss.kr/link?id=A107510815
2017
-
학술저널
3146-3150(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Although the ion-sensitive field effect transistor (ISFET)-based biosensor has a great potential for point-of-care testing systems, the current drift still remains as a challenging issue for its commercialization. Furthermore, the drift makes...
<P>Although the ion-sensitive field effect transistor (ISFET)-based biosensor has a great potential for point-of-care testing systems, the current drift still remains as a challenging issue for its commercialization. Furthermore, the drift makes the design of readout circuit for a high-resolution biosensor very complicated because it is very sensitive to the amount of ionic species in electrolyte or human serum. However, its chemical/physical origin in neither yet fully understood nor modeled for the circuit design and simulation. In this paper, the mechanism of current drift in ISFET was explained by short term reaction and long term reaction dependent on position of hydrogen ion. Besides, we proposed the analytical drift model of drain current and threshold voltage for different pH levels and various device sizes in the top-down processed SiNW ISFET. We believe that our result is potentially useful for the drift-aware circuit design for high-resolution biosensor system.</P>
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